Аналоги NSS60101DMT. Основные параметры
Наименование производителя: NSS60101DMT
Маркировка: AN
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 2.27
W
Макcимально допустимое напряжение коллектор-база (Ucb): 60
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6
V
Макcимальный постоянный ток коллектора (Ic): 1
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 180
MHz
Ёмкость коллекторного перехода (Cc): 10
pf
Статический коэффициент передачи тока (hfe): 90
Корпус транзистора:
WDFN6
Аналоги (замена) для NSS60101DMT
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подбор ⓘ биполярного транзистора по параметрам
NSS60101DMT даташит
..1. Size:211K onsemi
nss60101dmt.pdf 

DATA SHEET www.onsemi.com Low VCE(sat) NPN Transistors 60 Volt, 1 Amp NPN Low VCE(sat) Transistors 60 V, 1 A MARKING NSS60101DMT DIAGRAM onsemi s e2PowerEdge family of low VCE(sat) transistors are 1 6 WDFN6 miniature surface mount devices featuring ultra low saturation voltage AN MG 2 5 CASE 506AN G (VCE(sat)) and high current gain capability. These are designed for use 3 4 1
4.1. Size:233K onsemi
nss60101dmr6.pdf 

Low VCE(sat) NPN Transistors, 60 V, 1 A NSS60101DMR6 ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These www.onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.
7.1. Size:116K onsemi
nss60100dmt.pdf 

NSS60100DMT 60 V, 1 A, Low VCE(sat) PNP Transistors ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These www.onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.
9.1. Size:107K onsemi
nss60601mz4-d.pdf 

NSS60601MZ4 60 V, 6.0 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where http //onsemi.com affordable efficient energy control is important. Typica
9.2. Size:249K onsemi
nss60200dmt.pdf 

DATA SHEET www.onsemi.com Low VCE(sat) PNP Transistors 60 Volt, 2 Amp PNP Low VCE(sat) Transistors 60 V, 2 A MARKING NSS60200DMT DIAGRAM onsemi s e2PowerEdge family of low VCE(sat) transistors are 1 miniature surface mount devices featuring ultra low saturation voltage WDFN6 AD M (VCE(sat)) and high current gain capability. These are designed for use CASE 506AN in low voltage, h
9.3. Size:206K onsemi
nss60201smt.pdf 

DATA SHEET www.onsemi.com Low VCE(sat) NPN Transistor 60 Volt, 2 Amp NPN Low VCE(sat) Transistor 60 V, 2 A MARKING NSS60201SMT DIAGRAM onsemi s e2PowerEdge family of low VCE(sat) transistors are 1 6 WDFN6 miniature surface mount devices featuring ultra low saturation voltage AQ MG 2 5 CASE 506AN G (VCE(sat)) and high current gain capability. These are designed for use 3 4 1
9.4. Size:110K onsemi
nss60601mz4t1g.pdf 

NSS60601MZ4, NSV60601MZ4T1G, NSV60601MZ4T3G 60 V, 6.0 A, Low VCE(sat) NPN Transistor http //onsemi.com ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation 60 VOLTS, 6.0 AMPS voltage (VCE(sat)) and high current gain capability. These are designed 2.0 WATTS for use in low voltage, high speed switching applications
9.5. Size:108K onsemi
nss60601mz4.pdf 

NSS60601MZ4 60 V, 6.0 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed http //onsemi.com for use in low voltage, high speed switching applications where affordable efficient energy control is important. 60 VOL
9.6. Size:69K onsemi
nss60600mz4.pdf 

NSS60600MZ4 60 V, 6.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where www.onsemi.com affordable efficient energy control is important. Typical a
9.7. Size:127K onsemi
nss60201lt1g.pdf 

NSS60201LT1G 60 V, 4.0 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These www.onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.
9.8. Size:148K onsemi
nss60200l.pdf 

NSS60200L 60 V, 4.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These www.onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. -
9.9. Size:127K onsemi
nss60200l-d.pdf 

NSS60200LT1G 60 V, 4.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is importa
9.10. Size:132K onsemi
nss60600mz4t1g.pdf 

NSS60600MZ4, NSV60600MZ4T1G, NSV60600MZ4T3G 60 V, 6.0 A, Low VCE(sat) PNP Transistor http //onsemi.com ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation -60 VOLTS, 6.0 AMPS voltage (VCE(sat)) and high current gain capability. These are designed 2.0 WATTS for use in low voltage, high speed switching application
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