NSS60600MZ4T3G Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NSS60600MZ4T3G
Código: 60600
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 2 W
Tensión colector-base (Vcb): 100 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 6 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 100 MHz
Capacitancia de salida (Cc): 60 pF
Ganancia de corriente contínua (hFE): 120
Encapsulados: SOT223
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NSS60600MZ4T3G datasheet
nss60600mz4t1g.pdf
NSS60600MZ4, NSV60600MZ4T1G, NSV60600MZ4T3G 60 V, 6.0 A, Low VCE(sat) PNP Transistor http //onsemi.com ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation -60 VOLTS, 6.0 AMPS voltage (VCE(sat)) and high current gain capability. These are designed 2.0 WATTS for use in low voltage, high speed switching application
nss60600mz4.pdf
NSS60600MZ4 60 V, 6.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where www.onsemi.com affordable efficient energy control is important. Typical a
nss60601mz4-d.pdf
NSS60601MZ4 60 V, 6.0 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where http //onsemi.com affordable efficient energy control is important. Typica
nss60601mz4t1g.pdf
NSS60601MZ4, NSV60601MZ4T1G, NSV60601MZ4T3G 60 V, 6.0 A, Low VCE(sat) NPN Transistor http //onsemi.com ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation 60 VOLTS, 6.0 AMPS voltage (VCE(sat)) and high current gain capability. These are designed 2.0 WATTS for use in low voltage, high speed switching applications
Otros transistores... NSS40302PDR2G, NSS40500UW3T2G, NSS40501UW3T2G, NSS40600CF8T1G, NSS40601CF8T1G, NSS60100DMT, NSS60101DMT, NSS60600MZ4T1G, 13005, NSS60601MZ4T1G, NSS60601MZ4T3G, NSTB1002DXV5, NSTB1005DXV5, NSTB60BDW1T1G, NSVB114YPDXV6T1G, NSVB123JPDXV6T1G, NSVB124XPDXV6T1G
History: CSC2002K
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