All Transistors. NSS60600MZ4T3G Datasheet

 

NSS60600MZ4T3G Datasheet and Replacement


   Type Designator: NSS60600MZ4T3G
   SMD Transistor Code: 60600
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 2 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 60 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: SOT223
 

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NSS60600MZ4T3G Datasheet (PDF)

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 nss60600mz4t1g.pdf pdf_icon

NSS60600MZ4T3G

NSS60600MZ4,NSV60600MZ4T1G,NSV60600MZ4T3G60 V, 6.0 A, Low VCE(sat)PNP Transistorhttp://onsemi.comON Semiconductors e2PowerEdge family of low VCE(sat)transistors are surface mount devices featuring ultra low saturation-60 VOLTS, 6.0 AMPSvoltage (VCE(sat)) and high current gain capability. These are designed2.0 WATTSfor use in low voltage, high speed switching application

 3.1. Size:69K  onsemi
 nss60600mz4.pdf pdf_icon

NSS60600MZ4T3G

NSS60600MZ460 V, 6.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are surface mount devices featuring ultra low saturationvoltage (VCE(sat)) and high current gain capability. These are designedfor use in low voltage, high speed switching applications wherewww.onsemi.comaffordable efficient energy control is important.Typical a

 7.1. Size:107K  onsemi
 nss60601mz4-d.pdf pdf_icon

NSS60600MZ4T3G

NSS60601MZ460 V, 6.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are surface mount devices featuring ultra low saturationvoltage (VCE(sat)) and high current gain capability. These are designedfor use in low voltage, high speed switching applications wherehttp://onsemi.comaffordable efficient energy control is important.Typica

 7.2. Size:110K  onsemi
 nss60601mz4t1g.pdf pdf_icon

NSS60600MZ4T3G

NSS60601MZ4,NSV60601MZ4T1G,NSV60601MZ4T3G60 V, 6.0 A, Low VCE(sat)NPN Transistorhttp://onsemi.comON Semiconductors e2PowerEdge family of low VCE(sat)transistors are surface mount devices featuring ultra low saturation60 VOLTS, 6.0 AMPSvoltage (VCE(sat)) and high current gain capability. These are designed2.0 WATTSfor use in low voltage, high speed switching applications

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Datasheet: NSS40302PDR2G , NSS40500UW3T2G , NSS40501UW3T2G , NSS40600CF8T1G , NSS40601CF8T1G , NSS60100DMT , NSS60101DMT , NSS60600MZ4T1G , S9013 , NSS60601MZ4T1G , NSS60601MZ4T3G , NSTB1002DXV5 , NSTB1005DXV5 , NSTB60BDW1T1G , NSVB114YPDXV6T1G , NSVB123JPDXV6T1G , NSVB124XPDXV6T1G .

History: KTD1945 | GES5818 | BU941ZT | KT201D | UN9214J | 2SD1247S | KT201V

Keywords - NSS60600MZ4T3G transistor datasheet

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