NSVB114YPDXV6T1G Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NSVB114YPDXV6T1G

Código: 14

Material: Si

Polaridad de transistor: Pre-Biased-NPN*PNP

Resistencia de Entrada Base R1 = 10 kOhm

Resistencia Base-Emisor R2 = 47 kOhm

Ratio típica de resistencia R1/R2 = 0.21

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.26 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 80

Encapsulados: SOT563

 Búsqueda de reemplazo de NSVB114YPDXV6T1G

- Selecciónⓘ de transistores por parámetros

 

NSVB114YPDXV6T1G datasheet

 0.1. Size:103K  onsemi
nsvb114ypdxv6t1g.pdf pdf_icon

NSVB114YPDXV6T1G

MUN5314DW1, NSBC114YPDXV6, NSBC114YPDP6 Complementary Bias Resistor Transistors http //onsemi.com R1 = 10 kW, R2 = 47 kW PIN CONNECTIONS NPN and PNP Transistors with Monolithic Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor R1 R2 Transistor (BRT) contains a single

 9.1. Size:165K  onsemi
nsvb123jpdxv6t1g.pdf pdf_icon

NSVB114YPDXV6T1G

NSBC114EPDXV6T1G, NSVBC114EPDXV6T1G Series Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias http //onsemi.com Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are SOT-

 9.2. Size:165K  onsemi
nsvb143zpdxv6t1g.pdf pdf_icon

NSVB114YPDXV6T1G

NSBC114EPDXV6T1G, NSVBC114EPDXV6T1G Series Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias http //onsemi.com Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are SOT-

 9.3. Size:165K  onsemi
nsvb124xpdxv6t1g.pdf pdf_icon

NSVB114YPDXV6T1G

NSBC114EPDXV6T1G, NSVBC114EPDXV6T1G Series Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias http //onsemi.com Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are SOT-

Otros transistores... NSS60101DMT, NSS60600MZ4T1G, NSS60600MZ4T3G, NSS60601MZ4T1G, NSS60601MZ4T3G, NSTB1002DXV5, NSTB1005DXV5, NSTB60BDW1T1G, D965, NSVB123JPDXV6T1G, NSVB124XPDXV6T1G, NSVB143TPDXV6T1G, NSVB143ZPDXV6T1G, NSVB144EPDXV6T1G, NSVB1706DMW5T1G, NSVBA114EDXV6T1G, NSVBA114YDXV6T1G