NSVB114YPDXV6T1G. Аналоги и основные параметры

Наименование производителя: NSVB114YPDXV6T1G

Маркировка: 14

Тип материала: Si

Полярность: Pre-Biased-NPN*PNP

Встроенный резистор цепи смещения R1 = 10 kOhm

Встроенный резистор цепи смещения R2 = 47 kOhm

Соотношение сопротивлений R1/R2 = 0.21

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.26 W

Макcимально допустимое напряжение коллектор-база (Ucb): 50 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V

Макcимальный постоянный ток коллектора (Ic): 0.1 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Статический коэффициент передачи тока (hFE): 80

Корпус транзистора: SOT563

 Аналоги (замена) для NSVB114YPDXV6T1G

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NSVB114YPDXV6T1G даташит

 0.1. Size:103K  onsemi
nsvb114ypdxv6t1g.pdfpdf_icon

NSVB114YPDXV6T1G

MUN5314DW1, NSBC114YPDXV6, NSBC114YPDP6 Complementary Bias Resistor Transistors http //onsemi.com R1 = 10 kW, R2 = 47 kW PIN CONNECTIONS NPN and PNP Transistors with Monolithic Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor R1 R2 Transistor (BRT) contains a single

 9.1. Size:165K  onsemi
nsvb123jpdxv6t1g.pdfpdf_icon

NSVB114YPDXV6T1G

NSBC114EPDXV6T1G, NSVBC114EPDXV6T1G Series Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias http //onsemi.com Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are SOT-

 9.2. Size:165K  onsemi
nsvb143zpdxv6t1g.pdfpdf_icon

NSVB114YPDXV6T1G

NSBC114EPDXV6T1G, NSVBC114EPDXV6T1G Series Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias http //onsemi.com Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are SOT-

 9.3. Size:165K  onsemi
nsvb124xpdxv6t1g.pdfpdf_icon

NSVB114YPDXV6T1G

NSBC114EPDXV6T1G, NSVBC114EPDXV6T1G Series Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias http //onsemi.com Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are SOT-

Другие транзисторы: NSS60101DMT, NSS60600MZ4T1G, NSS60600MZ4T3G, NSS60601MZ4T1G, NSS60601MZ4T3G, NSTB1002DXV5, NSTB1005DXV5, NSTB60BDW1T1G, D965, NSVB123JPDXV6T1G, NSVB124XPDXV6T1G, NSVB143TPDXV6T1G, NSVB143ZPDXV6T1G, NSVB144EPDXV6T1G, NSVB1706DMW5T1G, NSVBA114EDXV6T1G, NSVBA114YDXV6T1G