Справочник транзисторов. NSVB114YPDXV6T1G

 

Биполярный транзистор NSVB114YPDXV6T1G Даташит. Аналоги


   Наименование производителя: NSVB114YPDXV6T1G
   Маркировка: 14
   Тип материала: Si
   Полярность: Pre-Biased-NPN*PNP
   Встроенный резистор цепи смещения R1 = 10 kOhm
   Встроенный резистор цепи смещения R2 = 47 kOhm
   Соотношение сопротивлений R1/R2 = 0.21
   Максимальная рассеиваемая мощность (Pc): 0.26 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Статический коэффициент передачи тока (hfe): 80
   Корпус транзистора: SOT563
 

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NSVB114YPDXV6T1G Datasheet (PDF)

 0.1. Size:103K  onsemi
nsvb114ypdxv6t1g.pdfpdf_icon

NSVB114YPDXV6T1G

MUN5314DW1,NSBC114YPDXV6,NSBC114YPDP6Complementary BiasResistor Transistorshttp://onsemi.comR1 = 10 kW, R2 = 47 kWPIN CONNECTIONSNPN and PNP Transistors with MonolithicBias Resistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a single

 9.1. Size:165K  onsemi
nsvb123jpdxv6t1g.pdfpdf_icon

NSVB114YPDXV6T1G

NSBC114EPDXV6T1G,NSVBC114EPDXV6T1G SeriesDual Bias ResistorTransistorsNPN and PNP Silicon Surface MountTransistors with Monolithic Biashttp://onsemi.comResistor NetworkThe BRT (Bias Resistor Transistor) contains a single transistor witha monolithic bias network consisting of two resistors; a series baseresistor and a base-emitter resistor. These digital transistors areSOT-

 9.2. Size:165K  onsemi
nsvb143zpdxv6t1g.pdfpdf_icon

NSVB114YPDXV6T1G

NSBC114EPDXV6T1G,NSVBC114EPDXV6T1G SeriesDual Bias ResistorTransistorsNPN and PNP Silicon Surface MountTransistors with Monolithic Biashttp://onsemi.comResistor NetworkThe BRT (Bias Resistor Transistor) contains a single transistor witha monolithic bias network consisting of two resistors; a series baseresistor and a base-emitter resistor. These digital transistors areSOT-

 9.3. Size:165K  onsemi
nsvb124xpdxv6t1g.pdfpdf_icon

NSVB114YPDXV6T1G

NSBC114EPDXV6T1G,NSVBC114EPDXV6T1G SeriesDual Bias ResistorTransistorsNPN and PNP Silicon Surface MountTransistors with Monolithic Biashttp://onsemi.comResistor NetworkThe BRT (Bias Resistor Transistor) contains a single transistor witha monolithic bias network consisting of two resistors; a series baseresistor and a base-emitter resistor. These digital transistors areSOT-

Другие транзисторы... NSS60101DMT , NSS60600MZ4T1G , NSS60600MZ4T3G , NSS60601MZ4T1G , NSS60601MZ4T3G , NSTB1002DXV5 , NSTB1005DXV5 , NSTB60BDW1T1G , NJW0281G , NSVB123JPDXV6T1G , NSVB124XPDXV6T1G , NSVB143TPDXV6T1G , NSVB143ZPDXV6T1G , NSVB144EPDXV6T1G , NSVB1706DMW5T1G , NSVBA114EDXV6T1G , NSVBA114YDXV6T1G .

History: IT132 | 2SC631 | TI813 | AD-BC856-A | 2SC1654N | NB212EI | BD258-100

 

 
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