NSVB123JPDXV6T1G Todos los transistores

 

NSVB123JPDXV6T1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NSVB123JPDXV6T1G
   Código: 35
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN*PNP
   Resistencia de Entrada Base R1 = 2.2 kOhm
   Resistencia Base-Emisor R2 = 47 kOhm
   Ratio típica de resistencia R1/R2 = 0.047

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.36 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 80
   Paquete / Cubierta: SOT563
 

 Búsqueda de reemplazo de NSVB123JPDXV6T1G

   - Selección ⓘ de transistores por parámetros

 

NSVB123JPDXV6T1G Datasheet (PDF)

 0.1. Size:165K  onsemi
nsvb123jpdxv6t1g.pdf pdf_icon

NSVB123JPDXV6T1G

NSBC114EPDXV6T1G,NSVBC114EPDXV6T1G SeriesDual Bias ResistorTransistorsNPN and PNP Silicon Surface MountTransistors with Monolithic Biashttp://onsemi.comResistor NetworkThe BRT (Bias Resistor Transistor) contains a single transistor witha monolithic bias network consisting of two resistors; a series baseresistor and a base-emitter resistor. These digital transistors areSOT-

 8.1. Size:165K  onsemi
nsvb124xpdxv6t1g.pdf pdf_icon

NSVB123JPDXV6T1G

NSBC114EPDXV6T1G,NSVBC114EPDXV6T1G SeriesDual Bias ResistorTransistorsNPN and PNP Silicon Surface MountTransistors with Monolithic Biashttp://onsemi.comResistor NetworkThe BRT (Bias Resistor Transistor) contains a single transistor witha monolithic bias network consisting of two resistors; a series baseresistor and a base-emitter resistor. These digital transistors areSOT-

 9.1. Size:165K  onsemi
nsvb143zpdxv6t1g.pdf pdf_icon

NSVB123JPDXV6T1G

NSBC114EPDXV6T1G,NSVBC114EPDXV6T1G SeriesDual Bias ResistorTransistorsNPN and PNP Silicon Surface MountTransistors with Monolithic Biashttp://onsemi.comResistor NetworkThe BRT (Bias Resistor Transistor) contains a single transistor witha monolithic bias network consisting of two resistors; a series baseresistor and a base-emitter resistor. These digital transistors areSOT-

 9.2. Size:95K  onsemi
nsvb1706dmw5t1g.pdf pdf_icon

NSVB123JPDXV6T1G

NSB1706DMW5T1G,NSVB1706DMW5T1GDual Bias ResistorTransistorNPN Silicon Surface Mount Transistorswith Monolithic Bias Resistor NetworkThe Bias Resistor Transistor (BRT) contains a single transistor withhttp://onsemi.coma monolithic bias network consisting of two resistors; a series baseresistor and a base-emitter resistor. These digital transistors aredesigned to replace a sin

Otros transistores... NSS60600MZ4T1G , NSS60600MZ4T3G , NSS60601MZ4T1G , NSS60601MZ4T3G , NSTB1002DXV5 , NSTB1005DXV5 , NSTB60BDW1T1G , NSVB114YPDXV6T1G , TIP2955 , NSVB124XPDXV6T1G , NSVB143TPDXV6T1G , NSVB143ZPDXV6T1G , NSVB144EPDXV6T1G , NSVB1706DMW5T1G , NSVBA114EDXV6T1G , NSVBA114YDXV6T1G , NSVBC114EDXV6T1G .

History: 40246 | 2SC1729 | 40314S | BUW12AF | UMC5NT1G | U2T451 | ASY54N

 

 
Back to Top

 


 
.