NSVB123JPDXV6T1G - описание и поиск аналогов

 

Аналоги NSVB123JPDXV6T1G. Основные параметры


   Наименование производителя: NSVB123JPDXV6T1G
   Маркировка: 35
   Тип материала: Si
   Полярность: Pre-Biased-NPN*PNP
   Встроенный резистор цепи смещения R1 = 2.2 kOhm
   Встроенный резистор цепи смещения R2 = 47 kOhm
   Соотношение сопротивлений R1/R2 = 0.047
   Максимальная рассеиваемая мощность (Pc): 0.36 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Статический коэффициент передачи тока (hfe): 80
   Корпус транзистора: SOT563

 Аналоги (замена) для NSVB123JPDXV6T1G

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NSVB123JPDXV6T1G даташит

 0.1. Size:165K  onsemi
nsvb123jpdxv6t1g.pdfpdf_icon

NSVB123JPDXV6T1G

NSBC114EPDXV6T1G, NSVBC114EPDXV6T1G Series Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias http //onsemi.com Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are SOT-

 8.1. Size:165K  onsemi
nsvb124xpdxv6t1g.pdfpdf_icon

NSVB123JPDXV6T1G

NSBC114EPDXV6T1G, NSVBC114EPDXV6T1G Series Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias http //onsemi.com Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are SOT-

 9.1. Size:165K  onsemi
nsvb143zpdxv6t1g.pdfpdf_icon

NSVB123JPDXV6T1G

NSBC114EPDXV6T1G, NSVBC114EPDXV6T1G Series Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias http //onsemi.com Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are SOT-

 9.2. Size:95K  onsemi
nsvb1706dmw5t1g.pdfpdf_icon

NSVB123JPDXV6T1G

NSB1706DMW5T1G, NSVB1706DMW5T1G Dual Bias Resistor Transistor NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor (BRT) contains a single transistor with http //onsemi.com a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a sin

Другие транзисторы... NSS60600MZ4T1G , NSS60600MZ4T3G , NSS60601MZ4T1G , NSS60601MZ4T3G , NSTB1002DXV5 , NSTB1005DXV5 , NSTB60BDW1T1G , NSVB114YPDXV6T1G , 2SD669A , NSVB124XPDXV6T1G , NSVB143TPDXV6T1G , NSVB143ZPDXV6T1G , NSVB144EPDXV6T1G , NSVB1706DMW5T1G , NSVBA114EDXV6T1G , NSVBA114YDXV6T1G , NSVBC114EDXV6T1G .

History: 2SD1716 | 2SC1337

 

 
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