NSVBC114EPDXV6T1G Todos los transistores

 

NSVBC114EPDXV6T1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NSVBC114EPDXV6T1G
   Código: 11
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN*PNP
   Resistencia de Entrada Base R1 = 10 kOhm
   Resistencia Base-Emisor R2 = 10 kOhm
   Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.36 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 35
   Paquete / Cubierta: SOT563
 

 Búsqueda de reemplazo de NSVBC114EPDXV6T1G

   - Selección ⓘ de transistores por parámetros

 

NSVBC114EPDXV6T1G Datasheet (PDF)

 0.1. Size:101K  onsemi
nsvbc114epdxv6t1g.pdf pdf_icon

NSVBC114EPDXV6T1G

MUN5311DW1,NSBC114EPDXV6,NSBC114EPDP6Complementary BiasResistor Transistorshttp://onsemi.comR1 = 10 kW, R2 = 10 kWNPN and PNP Transistors with MonolithicPIN CONNECTIONSBias Resistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a single

 5.1. Size:89K  onsemi
nsvbc114edxv6t1g.pdf pdf_icon

NSVBC114EPDXV6T1G

MUN5211DW1,NSBC114EDXV6,NSBC114EDP6Dual NPN Bias ResistorTransistorshttp://onsemi.comR1 = 10 kW, R2 = 10 kWNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a single transistor wit

 6.1. Size:165K  onsemi
nsvbc114ydxv6t1g.pdf pdf_icon

NSVBC114EPDXV6T1G

NSBC114EPDXV6T1G,NSVBC114EPDXV6T1G SeriesDual Bias ResistorTransistorsNPN and PNP Silicon Surface MountTransistors with Monolithic Biashttp://onsemi.comResistor NetworkThe BRT (Bias Resistor Transistor) contains a single transistor witha monolithic bias network consisting of two resistors; a series baseresistor and a base-emitter resistor. These digital transistors areSOT-

Otros transistores... NSVB124XPDXV6T1G , NSVB143TPDXV6T1G , NSVB143ZPDXV6T1G , NSVB144EPDXV6T1G , NSVB1706DMW5T1G , NSVBA114EDXV6T1G , NSVBA114YDXV6T1G , NSVBC114EDXV6T1G , D667 , NSVBC114YDXV6T1G , NSVBC124EDXV6T1G , NSV2SA2029M3T5G , NSV2SC5658M3T5G , NSV40200LT1G , NSV40200UW6T1G , NSV40201LT1G , NSV40300MDR2G .

History: 2SD251 | GT400-5C

 

 
Back to Top

 


 
.