NSV2SA2029M3T5G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NSV2SA2029M3T5G
Código: F9
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.27 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 140 MHz
Capacitancia de salida (Cc): 3.5 pF
Ganancia de corriente contínua (hfe): 120
Paquete / Cubierta: SOT723
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NSV2SA2029M3T5G Datasheet (PDF)
nsv2sa2029m3t5g.pdf

2SA2029M3T5GPNP Silicon GeneralPurpose Amplifier TransistorThis PNP transistor is designed for general purpose amplifierapplications. This device is housed in the SOT-723 package which isdesigned for low power surface mount applications, where boardhttp://onsemi.comspace is at a premium.FeaturesPNP GENERAL Reduces Board SpacePURPOSE AMPLIFIER High hFE, 210-460 (Typ
nsv2sc5658m3t5g.pdf

2SC5658M3T5G,2SC5658RM3T5GNPN Silicon GeneralPurpose Amplifier TransistorThis NPN transistor is designed for general purpose amplifierapplications. This device is housed in the SOT-723 package which ishttp://onsemi.comdesigned for low power surface mount applications, where boardspace is at a premium.NPN GENERALFeaturesPURPOSE AMPLIFIER Reduces Board SpaceTRANSISTOR
Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SD2499 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
History: CV7342A-0 | 2SC1757E | CPH5520 | 2SC1727 | D42T4 | D43C8 | MP4051
History: CV7342A-0 | 2SC1757E | CPH5520 | 2SC1727 | D42T4 | D43C8 | MP4051



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