NSV2SA2029M3T5G Todos los transistores

 

NSV2SA2029M3T5G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NSV2SA2029M3T5G
   Código: F9
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.27 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 140 MHz
   Capacitancia de salida (Cc): 3.5 pF
   Ganancia de corriente contínua (hfe): 120
   Paquete / Cubierta: SOT723
 

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NSV2SA2029M3T5G Datasheet (PDF)

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 nsv2sa2029m3t5g.pdf pdf_icon

NSV2SA2029M3T5G

2SA2029M3T5GPNP Silicon GeneralPurpose Amplifier TransistorThis PNP transistor is designed for general purpose amplifierapplications. This device is housed in the SOT-723 package which isdesigned for low power surface mount applications, where boardhttp://onsemi.comspace is at a premium.FeaturesPNP GENERAL Reduces Board SpacePURPOSE AMPLIFIER High hFE, 210-460 (Typ

 9.1. Size:98K  onsemi
 nsv2sc5658m3t5g.pdf pdf_icon

NSV2SA2029M3T5G

2SC5658M3T5G,2SC5658RM3T5GNPN Silicon GeneralPurpose Amplifier TransistorThis NPN transistor is designed for general purpose amplifierapplications. This device is housed in the SOT-723 package which ishttp://onsemi.comdesigned for low power surface mount applications, where boardspace is at a premium.NPN GENERALFeaturesPURPOSE AMPLIFIER Reduces Board SpaceTRANSISTOR

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History: BD543 | 2SC762 | SC109 | D7A30 | MRF401 | 3DD515

 

 
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