NSV40200UW6T1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NSV40200UW6T1G
Código: VA
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1.5 W
Tensión colector-base (Vcb): 40 V
Tensión colector-emisor (Vce): 40 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 140 MHz
Capacitancia de salida (Cc): 100 pF
Ganancia de corriente contínua (hfe): 150
Paquete / Cubierta: WDFN6
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NSV40200UW6T1G Datasheet (PDF)
nsv40200uw6t1g.pdf

NSS40200UW6T1G,NSV40200UW6T1G40 V, 2.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applications http://onsemi.comwhere affordable efficient energy
nss40200l nsv40200l.pdf

NSS40200L, NSV40200L40 V, 2.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesewww.onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is im
nsv40200lt1g.pdf

NSS40200LT1G,NSV40200LT1G40 V, 4.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)http://onsemi.comtransistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. These-40 VOLTSare designed for use in low voltage, high speed switching applications4.0 AMPSwhere affordable
nss40201lt1g nsv40201lt1g.pdf

NSS40201LT1G,NSV40201LT1G40 V, 2.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)www.onsemi.comtransistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. These40 VOLTS, 2.0 AMPSare designed for use in low voltage, high speed switching applicationsNPN LOW VCE(sat) TRA
Otros transistores... NSVBA114YDXV6T1G , NSVBC114EDXV6T1G , NSVBC114EPDXV6T1G , NSVBC114YDXV6T1G , NSVBC124EDXV6T1G , NSV2SA2029M3T5G , NSV2SC5658M3T5G , NSV40200LT1G , 2SD1555 , NSV40201LT1G , NSV40300MDR2G , NSV40300MZ4T1G , NSV40301MDR2G , NSV40301MZ4T1G , NSV40302PDR2G , NSBC144EDP6 , NSBC144EDXV6 .
History: CSC2458BL | RN2321A | 2SC2508 | TN750 | BC846BM3 | DTA124EMFHA | NSBA123JDXV6T5G
History: CSC2458BL | RN2321A | 2SC2508 | TN750 | BC846BM3 | DTA124EMFHA | NSBA123JDXV6T5G



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