NSV40200UW6T1G Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NSV40200UW6T1G
Código: VA
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1.5 W
Tensión colector-base (Vcb): 40 V
Tensión colector-emisor (Vce): 40 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 140 MHz
Capacitancia de salida (Cc): 100 pF
Ganancia de corriente contínua (hFE): 150
Encapsulados: WDFN6
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NSV40200UW6T1G datasheet
nsv40200uw6t1g.pdf
NSS40200UW6T1G, NSV40200UW6T1G 40 V, 2.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications http //onsemi.com where affordable efficient energy
nss40200l nsv40200l.pdf
NSS40200L, NSV40200L 40 V, 2.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These www.onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is im
nsv40200lt1g.pdf
NSS40200LT1G, NSV40200LT1G 40 V, 4.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) http //onsemi.com transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These -40 VOLTS are designed for use in low voltage, high speed switching applications 4.0 AMPS where affordable
nss40201lt1g nsv40201lt1g.pdf
NSS40201LT1G, NSV40201LT1G 40 V, 2.0 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) www.onsemi.com transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These 40 VOLTS, 2.0 AMPS are designed for use in low voltage, high speed switching applications NPN LOW VCE(sat) TRA
Otros transistores... NSVBA114YDXV6T1G, NSVBC114EDXV6T1G, NSVBC114EPDXV6T1G, NSVBC114YDXV6T1G, NSVBC124EDXV6T1G, NSV2SA2029M3T5G, NSV2SC5658M3T5G, NSV40200LT1G, S9018, NSV40201LT1G, NSV40300MDR2G, NSV40300MZ4T1G, NSV40301MDR2G, NSV40301MZ4T1G, NSV40302PDR2G, NSBC144EDP6, NSBC144EDXV6
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