NSV40201LT1G Todos los transistores

 

NSV40201LT1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NSV40201LT1G
   Código: VB
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.54 W
   Tensión colector-base (Vcb): 40 V
   Tensión colector-emisor (Vce): 40 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 2 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 150 MHz
   Capacitancia de salida (Cc): 45 pF
   Ganancia de corriente contínua (hfe): 200
   Paquete / Cubierta: SOT23
 

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NSV40201LT1G Datasheet (PDF)

 ..1. Size:86K  onsemi
 nss40201lt1g nsv40201lt1g.pdf pdf_icon

NSV40201LT1G

NSS40201LT1G,NSV40201LT1G40 V, 2.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)www.onsemi.comtransistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. These40 VOLTS, 2.0 AMPSare designed for use in low voltage, high speed switching applicationsNPN LOW VCE(sat) TRA

 ..2. Size:106K  onsemi
 nsv40201lt1g.pdf pdf_icon

NSV40201LT1G

NSS40201LT1G,NSV40201LT1G40 V, 2.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)http://onsemi.comtransistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. These40 VOLTS, 2.0 AMPSare designed for use in low voltage, high speed switching applicationsNPN LOW VCE(sat)

 7.1. Size:86K  onsemi
 nss40200l nsv40200l.pdf pdf_icon

NSV40201LT1G

NSS40200L, NSV40200L40 V, 2.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesewww.onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is im

 7.2. Size:127K  onsemi
 nsv40200lt1g.pdf pdf_icon

NSV40201LT1G

NSS40200LT1G,NSV40200LT1G40 V, 4.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)http://onsemi.comtransistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. These-40 VOLTSare designed for use in low voltage, high speed switching applications4.0 AMPSwhere affordable

MOSTRAR MÁS

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 8050 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: BCX45 | NSBC123JPDXV6T5G | 2SA1877

 

 
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