NSV40300MZ4T1G Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NSV40300MZ4T1G
Código: 40300
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 2 W
Tensión colector-base (Vcb): 40 V
Tensión colector-emisor (Vce): 40 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 3 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 160 MHz
Capacitancia de salida (Cc): 40 pF
Ganancia de corriente contínua (hFE): 175
Encapsulados: SOT223
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NSV40300MZ4T1G datasheet
nsv40300mz4t1g.pdf
NSS40300MZ4 Bipolar Power Transistors 40 V, 3.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation http //onsemi.com voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where PNP TRANSISTOR affordable effic
nsv40300mdr2g.pdf
NSS40300MDR2G, NSV40300MDR2G Dual Matched 40 V, 6.0 A, Low VCE(sat) PNP Transistor These transistors are part of the ON Semiconductor e2PowerEdge http //onsemi.com family of Low VCE(sat) transistors. They are assembled to create a pair of devices highly matched in all parameters, including ultra low 40 VOLTS saturation voltage VCE(sat), high current gain and Base/Emitter turn on 6.0 A
nss40300mdr2g nsv40300mdr2g.pdf
NSS40300MDR2G, NSV40300MDR2G Dual Matched 40 V, 6.0 A, Low VCE(sat) PNP Transistor These transistors are part of the ON Semiconductor e2PowerEdge http //onsemi.com family of Low VCE(sat) transistors. They are assembled to create a pair of devices highly matched in all parameters, including ultra low 40 VOLTS saturation voltage VCE(sat), high current gain and Base/Emitter turn on 6.0 A
nsv40302pdr2g.pdf
NSS40302PDR2G Complementary 40 V, 6.0 A, Low VCE(sat) Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed www.onsemi.com for use in low voltage, high speed switching applications where affordable efficient energy control is important
Otros transistores... NSVBC114YDXV6T1G, NSVBC124EDXV6T1G, NSV2SA2029M3T5G, NSV2SC5658M3T5G, NSV40200LT1G, NSV40200UW6T1G, NSV40201LT1G, NSV40300MDR2G, D882P, NSV40301MDR2G, NSV40301MZ4T1G, NSV40302PDR2G, NSBC144EDP6, NSBC144EDXV6, NSBC144EF3, NSBC144EPDP6, NSBC144EPDXV6
History: MPS8097
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