NSV40300MZ4T1G. Аналоги и основные параметры

Наименование производителя: NSV40300MZ4T1G

Маркировка: 40300

Тип материала: Si

Полярность: PNP

Предельные значения

Максимальная рассеиваемая мощность (Pc): 2 W

Макcимально допустимое напряжение коллектор-база (Ucb): 40 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V

Макcимальный постоянный ток коллектора (Ic): 3 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Граничная частота коэффициента передачи тока (ft): 160 MHz

Ёмкость коллекторного перехода (Cc): 40 pf

Статический коэффициент передачи тока (hFE): 175

Корпус транзистора: SOT223

 Аналоги (замена) для NSV40300MZ4T1G

- подборⓘ биполярного транзистора по параметрам

 

NSV40300MZ4T1G даташит

 ..1. Size:89K  onsemi
 nsv40300mz4t1g.pdf pdf_icon

NSV40300MZ4T1G

NSS40300MZ4 Bipolar Power Transistors 40 V, 3.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation http //onsemi.com voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where PNP TRANSISTOR affordable effic

 5.1. Size:132K  onsemi
 nsv40300mdr2g.pdf pdf_icon

NSV40300MZ4T1G

NSS40300MDR2G, NSV40300MDR2G Dual Matched 40 V, 6.0 A, Low VCE(sat) PNP Transistor These transistors are part of the ON Semiconductor e2PowerEdge http //onsemi.com family of Low VCE(sat) transistors. They are assembled to create a pair of devices highly matched in all parameters, including ultra low 40 VOLTS saturation voltage VCE(sat), high current gain and Base/Emitter turn on 6.0 A

 5.2. Size:219K  onsemi
 nss40300mdr2g nsv40300mdr2g.pdf pdf_icon

NSV40300MZ4T1G

NSS40300MDR2G, NSV40300MDR2G Dual Matched 40 V, 6.0 A, Low VCE(sat) PNP Transistor These transistors are part of the ON Semiconductor e2PowerEdge http //onsemi.com family of Low VCE(sat) transistors. They are assembled to create a pair of devices highly matched in all parameters, including ultra low 40 VOLTS saturation voltage VCE(sat), high current gain and Base/Emitter turn on 6.0 A

 7.1. Size:98K  onsemi
 nsv40302pdr2g.pdf pdf_icon

NSV40300MZ4T1G

NSS40302PDR2G Complementary 40 V, 6.0 A, Low VCE(sat) Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed www.onsemi.com for use in low voltage, high speed switching applications where affordable efficient energy control is important

ПОКАЗАТЬ ЕЩЁ

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