NSV40302PDR2G Todos los transistores

 

NSV40302PDR2G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NSV40302PDR2G
   Código: C40302
   Material: Si
   Polaridad de transistor: NPN*PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.58 W
   Tensión colector-base (Vcb): 40 V
   Tensión colector-emisor (Vce): 40 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 3 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Capacitancia de salida (Cc): 50 pF
   Ganancia de corriente contínua (hfe): 200
   Paquete / Cubierta: SOIC8
 

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NSV40302PDR2G Datasheet (PDF)

 ..1. Size:98K  onsemi
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NSV40302PDR2G

NSS40302PDR2GComplementary 40 V, 6.0 A,Low VCE(sat) TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are surface mount devices featuring ultra low saturationvoltage (VCE(sat)) and high current gain capability. These are designedwww.onsemi.comfor use in low voltage, high speed switching applications whereaffordable efficient energy control is important

 7.1. Size:132K  onsemi
nsv40300mdr2g.pdf pdf_icon

NSV40302PDR2G

NSS40300MDR2G,NSV40300MDR2GDual Matched 40 V, 6.0 A,Low VCE(sat) PNP TransistorThese transistors are part of the ON Semiconductor e2PowerEdgehttp://onsemi.comfamily of Low VCE(sat) transistors. They are assembled to create a pairof devices highly matched in all parameters, including ultra low40 VOLTSsaturation voltage VCE(sat), high current gain and Base/Emitter turn on6.0 A

 7.2. Size:106K  onsemi
nsv40301mdr2g.pdf pdf_icon

NSV40302PDR2G

NSS40301MDR2GDual Matched 40 V, 6.0 A,Low VCE(sat) NPN TransistorThese transistors are part of the ON Semiconductor e2PowerEdgefamily of Low VCE(sat) transistors. They are assembled to create a pairof devices highly matched in all parameters, including ultra lowsaturation voltage VCE(sat), high current gain and Base/Emitter turn onhttp://onsemi.comvoltage.Typical applications

 7.3. Size:89K  onsemi
nsv40300mz4t1g.pdf pdf_icon

NSV40302PDR2G

NSS40300MZ4Bipolar Power Transistors40 V, 3.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are surface mount devices featuring ultra low saturation http://onsemi.comvoltage (VCE(sat)) and high current gain capability. These are designedfor use in low voltage, high speed switching applications where PNP TRANSISTORaffordable effic

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History: KTC3206 | 2SB1193 | NTE126A | CV10440 | UNR5116 | 3DD264 | PDTA144EE

 

 
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