All Transistors. NSV40302PDR2G Datasheet

 

NSV40302PDR2G Datasheet and Replacement


   Type Designator: NSV40302PDR2G
   SMD Transistor Code: C40302
   Material of Transistor: Si
   Polarity: NPN*PNP
   Maximum Collector Power Dissipation (Pc): 0.58 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 50 pF
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: SOIC8
 

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NSV40302PDR2G Datasheet (PDF)

 ..1. Size:98K  onsemi
nsv40302pdr2g.pdf pdf_icon

NSV40302PDR2G

NSS40302PDR2GComplementary 40 V, 6.0 A,Low VCE(sat) TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are surface mount devices featuring ultra low saturationvoltage (VCE(sat)) and high current gain capability. These are designedwww.onsemi.comfor use in low voltage, high speed switching applications whereaffordable efficient energy control is important

 7.1. Size:132K  onsemi
nsv40300mdr2g.pdf pdf_icon

NSV40302PDR2G

NSS40300MDR2G,NSV40300MDR2GDual Matched 40 V, 6.0 A,Low VCE(sat) PNP TransistorThese transistors are part of the ON Semiconductor e2PowerEdgehttp://onsemi.comfamily of Low VCE(sat) transistors. They are assembled to create a pairof devices highly matched in all parameters, including ultra low40 VOLTSsaturation voltage VCE(sat), high current gain and Base/Emitter turn on6.0 A

 7.2. Size:106K  onsemi
nsv40301mdr2g.pdf pdf_icon

NSV40302PDR2G

NSS40301MDR2GDual Matched 40 V, 6.0 A,Low VCE(sat) NPN TransistorThese transistors are part of the ON Semiconductor e2PowerEdgefamily of Low VCE(sat) transistors. They are assembled to create a pairof devices highly matched in all parameters, including ultra lowsaturation voltage VCE(sat), high current gain and Base/Emitter turn onhttp://onsemi.comvoltage.Typical applications

 7.3. Size:89K  onsemi
nsv40300mz4t1g.pdf pdf_icon

NSV40302PDR2G

NSS40300MZ4Bipolar Power Transistors40 V, 3.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are surface mount devices featuring ultra low saturation http://onsemi.comvoltage (VCE(sat)) and high current gain capability. These are designedfor use in low voltage, high speed switching applications where PNP TRANSISTORaffordable effic

Datasheet: NSV2SC5658M3T5G , NSV40200LT1G , NSV40200UW6T1G , NSV40201LT1G , NSV40300MDR2G , NSV40300MZ4T1G , NSV40301MDR2G , NSV40301MZ4T1G , 2SD882 , NSBC144EDP6 , NSBC144EDXV6 , NSBC144EF3 , NSBC144EPDP6 , NSBC144EPDXV6 , NSBC144TF3 , NSBC144WDP6 , NSBC144WDXV6 .

History: MMUN2237LT1G | MP5449 | FE4022 | FB3726 | LMBT5541DW1T1G | MP4508 | STD13005F

Keywords - NSV40302PDR2G transistor datasheet

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