A1020 Todos los transistores

A1020 PNP silicon APPLICATION Power Amplifer and Switching Applications. MAXIMUM RATINGS Ta 25 PARAMETER SYMBOL RATING UNIT Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -40 V TO-92L 1 Emitter-base voltage VEBO -5 V 1. Emitter 2. Collector 3. Base Collector current IC -2 A Collector Power Dissipation PC 900 mW Junction Te

2SA1020 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1020 Power Amplifier Applications Unit mm Power Switching Applications Low Collector saturation voltage VCE (sat) = -0.5 V (max) (IC = -1 A) High collector power dissipation PC = 900 mW High-speed switching tstg = 1.0 s (typ.) Complementary to 2SC2655 Absolute Maximum Ratings (Ta = 2

2SA1020 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1020 Power Amplifier Applications Unit mm Power Switching Applications Low Collector saturation voltage VCE (sat) = -0.5 V (max) (IC = -1 A) High collector power dissipation PC = 900 mW High-speed switching tstg = 1.0 s (typ.) Complementary to 2SC2655 Absolute Maximum Ratings (Ta = 2

MCC Micro Commercial Components TM 2SA1020L-O 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SA1020L-Y Phone (818) 701-4933 Fax (818) 701-4939 Features Halogen free available upon request by adding suffix "-HF" Collector of 0.9Watts of Power Dissipation. PNP Collector-current -2.0A Plastic-Encapsulate Operating and storage junction tempe

MCC Micro Commercial Components TM 2SA1020-O 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SA1020-Y Phone (818) 701-4933 Fax (818) 701-4939 Features Collector of 0.9Watts of Power Dissipation. PNP Collector-current -2.0A Plastic-Encapsulate Operating and storage junction temperature range -55 to +150 Epoxy meets UL 94 V-0 flammabilit

MCC Micro Commercial Components TM 2SA1020-O 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SA1020-Y Phone (818) 701-4933 Fax (818) 701-4939 Features Collector of 0.9Watts of Power Dissipation. PNP Collector-current -2.0A Plastic-Encapsulate Operating and storage junction temperature range -55 to +150 Epoxy meets UL 94 V-0 flammabilit

MCC Micro Commercial Components TM 2SA1020L-O 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SA1020L-Y Phone (818) 701-4933 Fax (818) 701-4939 Features Halogen free available upon request by adding suffix "-HF" Collector of 0.9Watts of Power Dissipation. PNP Collector-current -2.0A Plastic-Encapsulate Operating and storage junction tempe

2SA1020 One Watt High Current PNP Transistor Features This is a Pb-Free Device* http //onsemi.com MAXIMUM RATINGS VOLTAGE AND CURRENT Rating Symbol Value Unit ARE NEGATIVE FOR Collector-Emitter Voltage VCE 50 Vdc PNP TRANSISTORS Collector-Base Voltage VCB 50 Vdc Emitter-Base Voltage VEB 5.0 Vdc COLLECTOR Collector Current - Continuous IC 2.0 Adc 2 Total Power Dissipation @

2SA1020 One Watt High Current PNP Transistor Features This is a Pb-Free Device* http //onsemi.com MAXIMUM RATINGS VOLTAGE AND CURRENT Rating Symbol Value Unit ARE NEGATIVE FOR Collector-Emitter Voltage VCE 50 Vdc PNP TRANSISTORS Collector-Base Voltage VCB 50 Vdc Emitter-Base Voltage VEB 5.0 Vdc COLLECTOR Collector Current - Continuous IC 2.0 Adc 2 Total Power Dissipation @

UNISONIC TECHNOLOGIES CO., LTD 2SA1020 PNP SILICON TRANSISTOR 3 SILICON PNP EPITAXIAL TRANSISTOR 2 1 1 SOT-23 SOT-89 (JEDEC TO-236) DESCRIPTION The UTC 2SA1020 is designed for power amplifier and power switching applications. 1 TO-92 FEATURES *Low collector saturation voltage VCE(SAT)=-0.5V(MAX) (IC= -1A) *High speed switching time tSTG=1.0 s(TYP) 1 *C

2SA1020 -2A, -50V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92MOD FEATURES N Power amplifier applications G H Emitter Collector Base CLASSIFICATION OF hFE(1) M J L Product-Rank 2SA1020-O 2SA1020-Y A D Range 70-140 120-240 B K E F C Collector

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS CSA1020 PNP CSC2655 NPN TO-92 Plastic Package ABSOLUTE MAXIMUM RATINGS (Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL VALUE UNIT VCEO Collector Emitter Voltage 50 V VCBO Collector Base Voltage 50 V VEBO Emitter Base Voltage 5V IC

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TRANSISTOR (PNP) 1. EMITTER Power mplifier pplications 2. COLLECTOR 3. BASE Equivalent Circuit

2SA1020 TO-92L Transistor (PNP) TO-92L 1. EMITTER 2. COLLECTOR 3. BASE 2 3 1 4.700 Features 5.100 Power amplifier applications 7.800 8.200 MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.600 Symbol Parameter Value Units 0.800 VCBO Collector-Base Voltage -50 V 0.350 0.550 VCEO Collector-Emitter Voltage -50 V 13.800 14.200 VEBO Emitter-Base Voltage -5 V IC

2SA1020 TO-92MOD Transistor (PNP) TO-92MOD 1. EMITTER 1 2 2. COLLECTOR 3 3. BASE Features 5.800 6.200 Power amplifier applications MAXIMUM RATINGS (TA=25 unless otherwise noted) 8.400 8.800 Symbol Parameter Value Units 0.900 1.100 VCBO Collector-Base Voltage -50 V 0.400 0.600 VCEO Collector-Emitter Voltage -50 V 13.800 VEBO Emitter-Base Voltage -5 V 14.20

2SA1020 PNP 2 1 3 2 3 1. EMITTER 2. COLLECTOR 1 3. BASE TO-92MOD Value V CEO -50 -50 -5 -2,0 900 1 7.25 138 2SA1020=A1020 -10 -50 u -0.1 -40 -0.1 u -5.0 1 WEITRON http //www.weitron.com.tw 2SA1020 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Typ Symbol Max Unit Min ON CHARACTERISTICS DC Current Gain - - (IC=-5

Spec. No. C621K3 Issued Date 2013.03.06 CYStech Electronics Corp. Revised Date 2013.12.25 Page No. 1/8 PNP Epitaxial Planar Transistor BTA1020K3 Features Low V , V = -215mV (Typ.) @ I /I =-1A/-50mA CE(SAT) CE(SAT) C B High breakdown voltage, BV =-50V CEO Complementary to BTC2655K3 Pb-free lead plating and halogen-free package Symbol Outline BTA

2SA1020 Rev.F Mar.-2016 DATA SHEET / Descriptions TO-92LM PNP Silicon PNP transistor in a TO-92LM Plastic Package. / Features , , 2SC2655 Low collector saturation voltage high speed switching time, complementary pair with 2SC2655. / Applications ,

SEMICONDUCTOR FTA1020 TECHNICAL DATA FEATURES B Power Amplifier Applications Complementary to FTC265 55 E DIM MILLIMETERS MAXIMUM RATINGS (Ta=25 unless otherwise noted) A 8.2 MAX D B 5.1 MAX Symbol Parameter Value Unit C 1.58 MAX D 0.55 MAX E 0.7 TYP VCBO Collector-Base Voltage -50 V F 1.27 TYP G 2.54 TYP VCEO Collector-Emitter Voltage -50 V F H 14.20 MAX G

SMD Type Transistors PNP Transistors 2SA1020 1.70 0.1 Features Collector Current Capability IC=-2A Collector Emitter Voltage VCEO=-50V Complementary to 2SC2655 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO -50 V Emitter -

CHENMKO ENTERPRISE CO.,LTD 2SA1020GP SMALL FLAT PNP Epitaxial Transistor VOLTAGE 50 Volts CURRENT 0.5 Ampere APPLICATION * Power amplifier . FEATURE * Small flat package. (SOT-23) SOT-23 * Low saturation voltage VCE(sat)=-0.5V(max.)(IC=-0.5A) * High speed switching time tstg= 1.0uSec (typ.) * High saturation current capability. (1) (3) CONSTRUCTION (2) * PNP Switching Transi

2SA1020I(3CG1020I) PNP /SILICON PNP TRANSISTOR , Purpose Power amplifier and switching applications. , , 2SC2655I(3DG2655I) Features Low collector saturation voltage high speed switching time, complementary pair with 2SC2655I(3DG2655I). /Absolute maximum rating