A1020 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

A1020 PNP silicon APPLICATION: Power Amplifer and Switching Applications.MAXIMUM RATINGSTa25PARAMETER SYMBOL RATING UNITCollector-base voltage VCBO -50 VCollector-emitter voltage VCEO -40 VTO-92L1Emitter-base voltage VEBO -5 V1. Emitter 2. Collector 3. BaseCollector current IC -2 ACollector Power Dissipation PC 900 mWJunction Te

2SA1020 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1020 Power Amplifier Applications Unit: mmPower Switching Applications Low Collector saturation voltage: VCE (sat) = -0.5 V (max) (IC = -1 A) High collector power dissipation: PC = 900 mW High-speed switching: tstg = 1.0 s (typ.) Complementary to 2SC2655 Absolute Maximum Ratings (Ta = 2

2SA1020 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1020 Power Amplifier Applications Unit: mmPower Switching Applications Low Collector saturation voltage: VCE (sat) = -0.5 V (max) (IC = -1 A) High collector power dissipation: PC = 900 mW High-speed switching: tstg = 1.0 s (typ.) Complementary to 2SC2655 Absolute Maximum Ratings (Ta = 2

MCCMicro Commercial ComponentsTM 2SA1020L-O20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SA1020L-YPhone: (818) 701-4933Fax: (818) 701-4939Features Halogen free available upon request by adding suffix "-HF" Collector of 0.9Watts of Power Dissipation. PNP Collector-current -2.0A Plastic-Encapsulate Operating and storage junction tempe

MCCMicro Commercial ComponentsTM 2SA1020-O20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SA1020-YPhone: (818) 701-4933Fax: (818) 701-4939Features Collector of 0.9Watts of Power Dissipation. PNP Collector-current -2.0A Plastic-Encapsulate Operating and storage junction temperature range: -55 to +150 Epoxy meets UL 94 V-0 flammabilit

MCCMicro Commercial ComponentsTM 2SA1020-O20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SA1020-YPhone: (818) 701-4933Fax: (818) 701-4939Features Collector of 0.9Watts of Power Dissipation. PNP Collector-current -2.0A Plastic-Encapsulate Operating and storage junction temperature range: -55 to +150 Epoxy meets UL 94 V-0 flammabilit

MCCMicro Commercial ComponentsTM 2SA1020L-O20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SA1020L-YPhone: (818) 701-4933Fax: (818) 701-4939Features Halogen free available upon request by adding suffix "-HF" Collector of 0.9Watts of Power Dissipation. PNP Collector-current -2.0A Plastic-Encapsulate Operating and storage junction tempe

2SA1020One Watt High Current PNP TransistorFeatures This is a Pb-Free Device*http://onsemi.comMAXIMUM RATINGSVOLTAGE AND CURRENTRating Symbol Value UnitARE NEGATIVE FORCollector-Emitter Voltage VCE 50 VdcPNP TRANSISTORSCollector-Base Voltage VCB 50 VdcEmitter-Base Voltage VEB 5.0 VdcCOLLECTORCollector Current - Continuous IC 2.0 Adc2Total Power Dissipation @

2SA1020One Watt High Current PNP TransistorFeatures This is a Pb-Free Device*http://onsemi.comMAXIMUM RATINGSVOLTAGE AND CURRENTRating Symbol Value UnitARE NEGATIVE FORCollector-Emitter Voltage VCE 50 VdcPNP TRANSISTORSCollector-Base Voltage VCB 50 VdcEmitter-Base Voltage VEB 5.0 VdcCOLLECTORCollector Current - Continuous IC 2.0 Adc2Total Power Dissipation @

UNISONIC TECHNOLOGIES CO., LTD 2SA1020 PNP SILICON TRANSISTOR 3SILICON PNP EPITAXIAL TRANSISTOR 211SOT-23SOT-89(JEDEC TO-236) DESCRIPTION The UTC 2SA1020 is designed for power amplifier and power switching applications. 1TO-92 FEATURES *Low collector saturation voltage: VCE(SAT)=-0.5V(MAX) (IC= -1A) *High speed switching time: tSTG=1.0s(TYP) 1*C

2SA1020 -2A, -50V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92MODFEATURES N Power amplifier applications G HEmitter Collector Base CLASSIFICATION OF hFE(1) MJLProduct-Rank 2SA1020-O 2SA1020-Y A DRange 70-140 120-240 BKE FCCollector

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyCOMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS CSA1020 PNPCSC2655 NPNTO-92Plastic PackageABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL VALUE UNITVCEOCollector Emitter Voltage 50 VVCBOCollector Base Voltage 50 VVEBOEmitter Base Voltage 5VIC

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TRANSISTOR (PNP) 1. EMITTER Power mplifier pplications 2. COLLECTOR3. BASE Equivalent Circuit

2SA1020 TO-92L Transistor (PNP)TO-92L1. EMITTER 2. COLLECTOR 3. BASE 2 3 14.700Features 5.100 Power amplifier applications 7.8008.200MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.600Symbol Parameter Value Units 0.800VCBO Collector-Base Voltage -50 V 0.3500.550VCEO Collector-Emitter Voltage -50 V 13.80014.200VEBO Emitter-Base Voltage -5 V IC

2SA1020 TO-92MOD Transistor (PNP)TO-92MOD1. EMITTER 1 22. COLLECTOR 3 3. BASE Features5.8006.200 Power amplifier applications MAXIMUM RATINGS (TA=25 unless otherwise noted) 8.4008.800Symbol Parameter Value Units0.9001.100VCBO Collector-Base Voltage -50 V 0.4000.600VCEO Collector-Emitter Voltage -50 V 13.800VEBO Emitter-Base Voltage -5 V 14.20

2SA1020PNP213231. EMITTER2. COLLECTOR13. BASE TO-92MODValueVCEO -50-50-5-2,090017.251382SA1020=A1020-10 -50u-0.1-40-0.1 u-5.01WEITRONhttp://www.weitron.com.tw2SA1020ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)CharacteristicsTypSymbol Max UnitMinON CHARACTERISTICSDC Current Gain--(IC=-5

Spec. No. : C621K3 Issued Date : 2013.03.06 CYStech Electronics Corp.Revised Date : 2013.12.25 Page No. : 1/8 PNP Epitaxial Planar Transistor BTA1020K3Features Low V , V = -215mV (Typ.) @ I /I =-1A/-50mA CE(SAT) CE(SAT) C B High breakdown voltage, BV =-50V CEO Complementary to BTC2655K3 Pb-free lead plating and halogen-free package Symbol Outline BTA

2SA1020 Rev.F Mar.-2016 DATA SHEET / Descriptions TO-92LM PNP Silicon PNP transistor in a TO-92LM Plastic Package. / Features ,, 2SC2655 Low collector saturation voltage high speed switching time, complementary pair with 2SC2655. / Applications ,

SEMICONDUCTORFTA1020TECHNICAL DATAFEATURES B Power Amplifier Applications Complementary to FTC26555 EDIM MILLIMETERSMAXIMUM RATINGS (Ta=25 unless otherwise noted) A 8.2 MAXDB 5.1 MAXSymbol Parameter Value Unit C 1.58 MAXD 0.55 MAXE 0.7 TYPVCBO Collector-Base Voltage -50 V F 1.27 TYPG 2.54 TYPVCEO Collector-Emitter Voltage -50 V FH 14.20 MAX G

SMD Type TransistorsPNP Transistors2SA10201.70 0.1 Features Collector Current Capability IC=-2A Collector Emitter Voltage VCEO=-50V Complementary to 2SC26550.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO -50 V Emitter -

CHENMKO ENTERPRISE CO.,LTD2SA1020GPSMALL FLAT PNP Epitaxial Transistor VOLTAGE 50 Volts CURRENT 0.5 AmpereAPPLICATION* Power amplifier .FEATURE* Small flat package. (SOT-23) SOT-23* Low saturation voltage VCE(sat)=-0.5V(max.)(IC=-0.5A) * High speed switching time: tstg= 1.0uSec (typ.)* High saturation current capability.(1)(3)CONSTRUCTION(2)* PNP Switching Transi

2SA1020I(3CG1020I) PNP /SILICON PNP TRANSISTOR :, Purpose: Power amplifier and switching applications. :,, 2SC2655I(3DG2655I) Features: Low collector saturation voltage high speed switching time, complementary pair with 2SC2655I(3DG2655I). /Absolute maximum rating