A1020 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: A1020 📄📄
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.9 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 100 MHz
Capacitancia de salida (Cc): 40 pF
Ganancia de corriente contínua (hFE): 70
Encapsulados: TO92L
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A1020 datasheet
..1. Size:307K china
a1020.pdf 
A1020 PNP silicon APPLICATION Power Amplifer and Switching Applications. MAXIMUM RATINGS Ta 25 PARAMETER SYMBOL RATING UNIT Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -40 V TO-92L 1 Emitter-base voltage VEBO -5 V 1. Emitter 2. Collector 3. Base Collector current IC -2 A Collector Power Dissipation PC 900 mW Junction Te
0.1. Size:172K toshiba
2sa1020o 2sa1020y.pdf
2SA1020 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1020 Power Amplifier Applications Unit mm Power Switching Applications Low Collector saturation voltage VCE (sat) = -0.5 V (max) (IC = -1 A) High collector power dissipation PC = 900 mW High-speed switching tstg = 1.0 s (typ.) Complementary to 2SC2655 Absolute Maximum Ratings (Ta = 2
0.2. Size:167K toshiba
2sa1020.pdf
2SA1020 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1020 Power Amplifier Applications Unit mm Power Switching Applications Low Collector saturation voltage VCE (sat) = -0.5 V (max) (IC = -1 A) High collector power dissipation PC = 900 mW High-speed switching tstg = 1.0 s (typ.) Complementary to 2SC2655 Absolute Maximum Ratings (Ta = 2
0.3. Size:378K mcc
2sa1020l-o.pdf
MCC Micro Commercial Components TM 2SA1020L-O 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SA1020L-Y Phone (818) 701-4933 Fax (818) 701-4939 Features Halogen free available upon request by adding suffix "-HF" Collector of 0.9Watts of Power Dissipation. PNP Collector-current -2.0A Plastic-Encapsulate Operating and storage junction tempe
0.4. Size:365K mcc
2sa1020-y.pdf
MCC Micro Commercial Components TM 2SA1020-O 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SA1020-Y Phone (818) 701-4933 Fax (818) 701-4939 Features Collector of 0.9Watts of Power Dissipation. PNP Collector-current -2.0A Plastic-Encapsulate Operating and storage junction temperature range -55 to +150 Epoxy meets UL 94 V-0 flammabilit
0.5. Size:365K mcc
2sa1020-o.pdf
MCC Micro Commercial Components TM 2SA1020-O 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SA1020-Y Phone (818) 701-4933 Fax (818) 701-4939 Features Collector of 0.9Watts of Power Dissipation. PNP Collector-current -2.0A Plastic-Encapsulate Operating and storage junction temperature range -55 to +150 Epoxy meets UL 94 V-0 flammabilit
0.6. Size:378K mcc
2sa1020l-y.pdf
MCC Micro Commercial Components TM 2SA1020L-O 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SA1020L-Y Phone (818) 701-4933 Fax (818) 701-4939 Features Halogen free available upon request by adding suffix "-HF" Collector of 0.9Watts of Power Dissipation. PNP Collector-current -2.0A Plastic-Encapsulate Operating and storage junction tempe
0.7. Size:93K onsemi
2sa1020-d.pdf
2SA1020 One Watt High Current PNP Transistor Features This is a Pb-Free Device* http //onsemi.com MAXIMUM RATINGS VOLTAGE AND CURRENT Rating Symbol Value Unit ARE NEGATIVE FOR Collector-Emitter Voltage VCE 50 Vdc PNP TRANSISTORS Collector-Base Voltage VCB 50 Vdc Emitter-Base Voltage VEB 5.0 Vdc COLLECTOR Collector Current - Continuous IC 2.0 Adc 2 Total Power Dissipation @
0.8. Size:92K onsemi
2sa1020rlrag.pdf
2SA1020 One Watt High Current PNP Transistor Features This is a Pb-Free Device* http //onsemi.com MAXIMUM RATINGS VOLTAGE AND CURRENT Rating Symbol Value Unit ARE NEGATIVE FOR Collector-Emitter Voltage VCE 50 Vdc PNP TRANSISTORS Collector-Base Voltage VCB 50 Vdc Emitter-Base Voltage VEB 5.0 Vdc COLLECTOR Collector Current - Continuous IC 2.0 Adc 2 Total Power Dissipation @
0.9. Size:740K utc
2sa1020.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SA1020 PNP SILICON TRANSISTOR 3 SILICON PNP EPITAXIAL TRANSISTOR 2 1 1 SOT-23 SOT-89 (JEDEC TO-236) DESCRIPTION The UTC 2SA1020 is designed for power amplifier and power switching applications. 1 TO-92 FEATURES *Low collector saturation voltage VCE(SAT)=-0.5V(MAX) (IC= -1A) *High speed switching time tSTG=1.0 s(TYP) 1 *C
0.10. Size:421K secos
2sa1020.pdf
2SA1020 -2A, -50V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92MOD FEATURES N Power amplifier applications G H Emitter Collector Base CLASSIFICATION OF hFE(1) M J L Product-Rank 2SA1020-O 2SA1020-Y A D Range 70-140 120-240 B K E F C Collector
0.11. Size:200K cdil
csa1020 csc2655.pdf
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS CSA1020 PNP CSC2655 NPN TO-92 Plastic Package ABSOLUTE MAXIMUM RATINGS (Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL VALUE UNIT VCEO Collector Emitter Voltage 50 V VCBO Collector Base Voltage 50 V VEBO Emitter Base Voltage 5V IC
0.12. Size:573K jiangsu
2sa1020.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TRANSISTOR (PNP) 1. EMITTER Power mplifier pplications 2. COLLECTOR 3. BASE Equivalent Circuit
0.13. Size:237K lge
2sa1020.pdf
2SA1020 TO-92L Transistor (PNP) TO-92L 1. EMITTER 2. COLLECTOR 3. BASE 2 3 1 4.700 Features 5.100 Power amplifier applications 7.800 8.200 MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.600 Symbol Parameter Value Units 0.800 VCBO Collector-Base Voltage -50 V 0.350 0.550 VCEO Collector-Emitter Voltage -50 V 13.800 14.200 VEBO Emitter-Base Voltage -5 V IC
0.14. Size:237K lge
2sa1020 to-92mod.pdf
2SA1020 TO-92MOD Transistor (PNP) TO-92MOD 1. EMITTER 1 2 2. COLLECTOR 3 3. BASE Features 5.800 6.200 Power amplifier applications MAXIMUM RATINGS (TA=25 unless otherwise noted) 8.400 8.800 Symbol Parameter Value Units 0.900 1.100 VCBO Collector-Base Voltage -50 V 0.400 0.600 VCEO Collector-Emitter Voltage -50 V 13.800 VEBO Emitter-Base Voltage -5 V 14.20
0.15. Size:429K wietron
2sa1020.pdf
2SA1020 PNP 2 1 3 2 3 1. EMITTER 2. COLLECTOR 1 3. BASE TO-92MOD Value V CEO -50 -50 -5 -2,0 900 1 7.25 138 2SA1020=A1020 -10 -50 u -0.1 -40 -0.1 u -5.0 1 WEITRON http //www.weitron.com.tw 2SA1020 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Typ Symbol Max Unit Min ON CHARACTERISTICS DC Current Gain - - (IC=-5
0.16. Size:303K cystek
bta1020k3.pdf
Spec. No. C621K3 Issued Date 2013.03.06 CYStech Electronics Corp. Revised Date 2013.12.25 Page No. 1/8 PNP Epitaxial Planar Transistor BTA1020K3 Features Low V , V = -215mV (Typ.) @ I /I =-1A/-50mA CE(SAT) CE(SAT) C B High breakdown voltage, BV =-50V CEO Complementary to BTC2655K3 Pb-free lead plating and halogen-free package Symbol Outline BTA
0.17. Size:922K blue-rocket-elect
2sa1020.pdf
2SA1020 Rev.F Mar.-2016 DATA SHEET / Descriptions TO-92LM PNP Silicon PNP transistor in a TO-92LM Plastic Package. / Features , , 2SC2655 Low collector saturation voltage high speed switching time, complementary pair with 2SC2655. / Applications ,
0.18. Size:159K first silicon
fta1020 to92l.pdf
SEMICONDUCTOR FTA1020 TECHNICAL DATA FEATURES B Power Amplifier Applications Complementary to FTC265 55 E DIM MILLIMETERS MAXIMUM RATINGS (Ta=25 unless otherwise noted) A 8.2 MAX D B 5.1 MAX Symbol Parameter Value Unit C 1.58 MAX D 0.55 MAX E 0.7 TYP VCBO Collector-Base Voltage -50 V F 1.27 TYP G 2.54 TYP VCEO Collector-Emitter Voltage -50 V F H 14.20 MAX G
0.19. Size:1105K kexin
2sa1020.pdf
SMD Type Transistors PNP Transistors 2SA1020 1.70 0.1 Features Collector Current Capability IC=-2A Collector Emitter Voltage VCEO=-50V Complementary to 2SC2655 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO -50 V Emitter -
0.20. Size:117K chenmko
2sa1020gp.pdf
CHENMKO ENTERPRISE CO.,LTD 2SA1020GP SMALL FLAT PNP Epitaxial Transistor VOLTAGE 50 Volts CURRENT 0.5 Ampere APPLICATION * Power amplifier . FEATURE * Small flat package. (SOT-23) SOT-23 * Low saturation voltage VCE(sat)=-0.5V(max.)(IC=-0.5A) * High speed switching time tstg= 1.0uSec (typ.) * High saturation current capability. (1) (3) CONSTRUCTION (2) * PNP Switching Transi
0.21. Size:232K foshan
2sa1020i.pdf
2SA1020I(3CG1020I) PNP /SILICON PNP TRANSISTOR , Purpose Power amplifier and switching applications. , , 2SC2655I(3DG2655I) Features Low collector saturation voltage high speed switching time, complementary pair with 2SC2655I(3DG2655I). /Absolute maximum rating
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