A1036K Todos los transistores

A1036K PNP silicon APPLICATION GENERAL PURPOSE AMPLIFY APPLICATIONS, WITCHING APPLICATION. MAXIMUM RATINGS Ta 25 PARAMETER SYMBOL RATING UNIT Collector-base voltage VCBO -40 V Collector-emitter voltage VCEO -32 V Emitter-base voltage VEBO -5 V Collector current IC -500 mA 1 Collector Power Dissipation PC 200 mW 2 Junction Temp

2SA1036K Datasheet Medium Power Transistor (-32V,-500mA) lOutline l Parameter Value SMT3 VCEO -32V IC -500mA SOT-346 SC-59 lFeatures l 1)Large IC. lInner circuit l ICMAX=-500mA 2)Low VCE(sat). Ideal for low-voltage operating. 3)Complements the 2SC2411K. lApplication l GENERAL PURPOSE SMALL SIG

Transistors Medium Power Transistor (*32V, *0.5A) 2SA1036K / 2SA1577 / 2SA854S FFeatures FExternal dimensions (Units mm) 1) Large IC. ICMax. = *500mA 2) Low VCE(sat). Ideal for low-voltage operation. 3) Complements the 2SC2411K / 2SC1741S / 2SC4097. FStructure Epitaxial planar type PNP silicon transistor (96-86-B11) 204 Transistors 2SA1036K / 2SA1577 / 2SA854S FAbsolute maxim

2SA1036K FRA Datasheet Medium Power Transistor (-32V,-500mA) AEC-Q101 Qualified lOutline l SOT-346 Parameter Value SC-59 VCEO -32V IC -500mA SMT3 lFeatures lInner circuit l l 1) High IC(=500mA) on small package. 2)Low VCE(sat). Ideal for low-voltage operating. 3)Complements the 2SC2411K FRA. lApplication l GENERAL PURPOSE SM

2SA1036K SOT-23-3L Transistor(PNP) SOT-23-3L 1. BASE 2.92 2. EMITTER 0.35 1.17 3. COLLECTOR Features 2.80 1.60 Large IC. IC= -500 mA Low VCE(sat). Ideal for low-voltage operation. 0.15 1.90 MARKING HP, HQ, HR Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VC

2SA1036K PNP General Purpose Transistors 3 1 P b Lead(Pb)-Free 2 SOT-23 MAXIMUM RATINGS(Ta=25 C) Rating Symbol Value Unit Collector-Emitter Voltage VCEO -32 V VCBO Collector-Base Voltage -40 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current - Continuous -500* mA Total Device Dissipation PD 0.2 mW TA=25 C Tj C Junction Temperature +150 Tstg Storage Temperature

FM120-M WILLAS 2SA1036KxLT1 THRU (*32V, *0.5A) Medium Power Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produc Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to

LESHAN RADIO COMPANY, LTD. Medium Power Transistor (*32V, *0.5A) L2SA1036KQLT1G Series L2SA1036KQLT1G Series S-L2SA1036KQLT1G Series FFeatures 1) Large IC. ICMax. = *500mA 2) Low VCE(sat). Ideal for low-voltage 3 operation. 3) We declare that the material of product compliance with RoHS requirements. 1 4)S- Prefix for Automotive and Other Applications Requiring Unique Site 2 a

LESHAN RADIO COMPANY, LTD. Medium Power Transistor (*32V, *0.5A) L2SA1036KQLT1G Series L2SA1036KQLT1G Series S-L2SA1036KQLT1G Series FFeatures 1) Large IC. ICMax. = *500mA 2) Low VCE(sat). Ideal for low-voltage 3 operation. 3) We declare that the material of product compliance with RoHS requirements. 1 4)S- Prefix for Automotive and Other Applications Requiring Unique Site 2 a

LESHAN RADIO COMPANY, LTD. Medium Power Transistor (*32V, *0.5A) L2SA1036KQLT1G Series L2SA1036KQLT1G Series S-L2SA1036KQLT1G Series FFeatures 1) Large IC. ICMax. = *500mA 2) Low VCE(sat). Ideal for low-voltage 3 operation. 3) We declare that the material of product compliance with RoHS requirements. 1 4)S- Prefix for Automotive and Other Applications Requiring Unique Site 2 a

LESHAN RADIO COMPANY, LTD. Medium Power Transistor (*32V, *0.5A) L2SA1036KQLT1G Series L2SA1036KQLT1G Series S-L2SA1036KQLT1G Series FFeatures 1) Large IC. ICMax. = *500mA 2) Low VCE(sat). Ideal for low-voltage 3 operation. 3) We declare that the material of product compliance with RoHS requirements. 1 4)S- Prefix for Automotive and Other Applications Requiring Unique Site 2 a

SEMICONDUCTOR FTA1036K TECHNICAL DATA Medium Power Transistor ( 32V, 0.5A) Features 1) Large IC. I = 500mA CMax 3 3 2) Low V . Ideal for low-voltage CE(sat) operation. 1 3) We declare that the material of product compliance with RoHS requirements. 1 2 2 Structure Epitaxial planar type PNP SOT-23 PNP silicon transistor DEVICE MARKING 1) FTA1036K-P = HP 2) FTA1036K-Q

CHENMKO ENTERPRISE CO.,LTD 2SA1036KGP SURFACE MOUNT Medium Power PNP Transistor VOLTAGE 32 Volts CURRENT 0.5 Ampere APPLICATION * Medium Power Amplifier . FEATURE * Surface mount package. (SOT-23) SOT-23 * Low saturation voltage V CE(sat)=-0.4V(max.)(IC=-100mA) * Low cob. Cob=7.0pF(Typ.) * PC= 200mW (mounted on ceramic substrate). * High saturation current capability. (1) (3)

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