A1213 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: A1213 📄📄
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 120 MHz
Capacitancia de salida (Cc): 40 pF
Ganancia de corriente contínua (hFE): 70
Encapsulados: SOT89
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A1213 datasheet
..1. Size:158K fgx
a1213.pdf 
A1213 PNP Transistors PNP Silicon APPLICATION Power Amplifier and Power Switching Applications. MAXIMUM RATINGS Ta=25 PARAMETER SYMBOL RATING UNIT Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -50 V SOT-89 Emitter-base voltage VEBO -5 V 1. BASE Collector current Ic -2 A Base current Ib -0.4 A 2. COLLECTOR 1
0.1. Size:195K toshiba
2sa1213o 2sa1213y.pdf
2SA1213 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1213 Power Amplifier Applications Unit mm Power Switching Applications Low saturation voltage VCE (sat) = -0.5 V (max) (IC = -1 A) High speed switching time tstg = 1.0 s (typ.) Small flat package PC = 1.0 to 2.0 W (mounted on a ceramic substrate) Complementary to 2SC2873 Absolut
0.2. Size:223K toshiba
2sa1213.pdf
2SA1213 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1213 Power Amplifier Applications Unit mm Power Switching Applications Low saturation voltage VCE (sat) = -0.5 V (max) (I C = -1 A) High speed switching time t = 1.0 s (typ.) stg Small flat package PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SC2873 Max
0.3. Size:128K diodes
2da1213o-y.pdf
2DA1213O/Y PNP SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data Epitaxial Planar Die Construction Case SOT89-3L Ideally Suited for Automated Assembly Processes Case Material Molded Plastic, "Green Molding Compound. UL Flammability Classification Rating 94V-0 Ideal for Medium Power Switching or Ampl
0.4. Size:999K mcc
2sa1213-o 2sa1213-y.pdf
2SA1213-O/2SA1213-Y Electrical Characteristics @ 25 C Unless Otherwise Specified Parameter Symbol Min Typ Max Units Conditions V(BR)CBO -50 IC=-100 A, IE=0 Collector-Base Breakdown Voltage V V(BR)CEO -50 IC=-10mA, IB=0 Collector-Emitter Breakdown Voltag V V(BR)EBO -5 IE=-100 A, IC=0 Emitter-Base Breakdown Voltage V ICBO VCB=-50V, IE=0 Collector-Base Cutoff Current -0.1 A IEB
0.5. Size:471K mcc
2sa1213-y.pdf
2SA1213-O MCC TM Micro Commercial Components Micro Commercial Components 20736 Marilla Street Chatsworth 2SA1213-Y CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates PNP Silicon RoHS Compliant. See ordering information) Low Saturation voltage VCE(sat)=0.5V(max.)(IC=1.0A) Epitaxial Transistors Small
0.6. Size:471K mcc
2sa1213-o.pdf
2SA1213-O MCC TM Micro Commercial Components Micro Commercial Components 20736 Marilla Street Chatsworth 2SA1213-Y CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates PNP Silicon RoHS Compliant. See ordering information) Low Saturation voltage VCE(sat)=0.5V(max.)(IC=1.0A) Epitaxial Transistors Small
0.7. Size:422K jiangsu
2sa1213.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SA1213 TRANSISTOR (PNP) 1. BASE FEATURES 2. COLLECTOR Complementary to 2SC2873 Small Flat Package 3. EMITTER Power Amplifier and Switching Applications Low Saturation Voltage High Speed Switching Time MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbo
0.8. Size:183K htsemi
2sa1213.pdf
2SA1 21 3 TRANSISTOR(PNP) SOT-89-3L 1. BASE FEATURES 2. COLLECTOR Complementary to 2SC2873 Small Flat Package 3. EMITTER Power Amplifier and Switching Applications Low Saturation Voltage High Speed Switching Time MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V
0.9. Size:520K willas
2sa1213.pdf
2SA1213 -89 Plastic-Encapsulate Transistors SOT TRANSISTOR (PNP) SOT-89 FEATURES Small Flat Package 1. BASE Power Amplifier and Switching Applications 2. COLLECTOR Low Saturation Voltage High Speed Switching Time 3. EMITTER Pb-Free package is available RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" MAXIMUM RATINGS (T
0.10. Size:688K semtech
st2sa1213u.pdf
ST 2SA1213U PNP Silicon Epitaxial Planar Transistor for power amplifier and power switching applications The transistor is subdivided into two groups, O and Y, according to its DC current gain. Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage -VCBO 50 V Collector Emitter Voltage -VCEO 50 V Emitter Base Voltage -VEBO 5 V Collector C
0.11. Size:1604K kexin
2sa1213.pdf
SMD Type Transistors PNP Transistors 2SA1213 1.70 0.1 Features Low Saturation Voltage VCE(sat) = -0.5V (max) (IC = -1A) High Speed Switching Time tstg = 1.0us (typ.) Small Flat Package 0.42 0.1 0.46 0.1 PC = 1 to 2W (mounted on ceramic substrate) Complementary to 2SC2873 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - B
0.12. Size:138K chenmko
2sa1213gp.pdf
CHENMKO ENTERPRISE CO.,LTD 2SA1213GP SMALL FLAT PNP Epitaxial Transistor VOLTAGE 50 Volts CURRENT 2 Ampere APPLICATION * Power amplifier . FEATURE SC-62/SOT-89 * Small flat package. (SC-62/SOT-89) * Low saturation voltage VCE(sat) =-0.5V(max.)(IC=-1A) * High speed switching time tstg= 1.0uSec (typ.) * PC= 1.0 to 2.0W (mounted on ceramic substrate). 4.6MAX. 1.6MAX. 1.7MAX. 0.4
0.13. Size:143K comchip
2sa1213o-g.pdf
General Purpose Transistor 2SA1213-G Series (PNP) RoHS Device Features 1 Base -Small flat package. 2 Collector SOT-89-3L 3 Emitter -Power amplifier and switching -applications. 0.181(4.60) 0.173(4.40) -Low saturation voltage. 0.061(1.55) REF. -High speed switching time. 0.102(2.60) 0.167(4.25) 0.091(2.30) 0.155(3.94) 1 2 3 Maximum Ratings (at TA=25 C unless other
0.14. Size:143K comchip
2sa1213y-g.pdf
General Purpose Transistor 2SA1213-G Series (PNP) RoHS Device Features 1 Base -Small flat package. 2 Collector SOT-89-3L 3 Emitter -Power amplifier and switching -applications. 0.181(4.60) 0.173(4.40) -Low saturation voltage. 0.061(1.55) REF. -High speed switching time. 0.102(2.60) 0.167(4.25) 0.091(2.30) 0.155(3.94) 1 2 3 Maximum Ratings (at TA=25 C unless other
0.15. Size:1369K pjsemi
2sa1213sq-o 2sa1213sq-y.pdf
2SA1213SQ PNP Transistor Features SOT-89 Low Saturation Voltage High Speed Switching Time As Complementary Type of the NPN Transistor 2SC2873SQ is Recommended. Equivalent Circuit 1.Base 2.Collector 3. Emitter 2.Collector Marking Code 2SA1213SQ-O NX 2SA1213SQ-Y NY 1.Base 3. Emitter . Absolute Maximum Ratings Ratings at 25 ambient temperature unless oth
0.16. Size:919K cn yfw
2sa1213.pdf
2SA1213 SOT-89 Ty p PNP Transistors 3 Features Low Saturation Voltage VCE(sat) = -0.5V (max) (IC = -1A) 2 High Speed Switching Time tstg = 1.0us (typ.) 1 1.Base Small Flat Package 2.Collector 3.Emitter PC = 1 to 2W (mounted on ceramic substrate) Simplified outline(SOT-89) Complementary to 2SC2873 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector -
0.17. Size:654K cn hottech
2sa1213.pdf
2SA1213 BIPOLAR TRANSISTOR (PNP) FEATURES Complementary to 2SC2873 Power Amplifier and Switching Application Low Saturation Voltage High Speed Switching Time Surface Mount device SOT-89 MECHANICAL DATA Case SOT-89 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.055 grams (approximate) MAXIMUM RATINGS (T = 2
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