A1213 Datasheet and Replacement
Type Designator: A1213
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 1
W
Maximum Collector-Base Voltage |Vcb|: 50
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 2
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 120
MHz
Collector Capacitance (Cc): 40
pF
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package:
SOT89
-
BJT ⓘ Cross-Reference Search
A1213 Datasheet (PDF)
..1. Size:158K fgx
a1213.pdf 

A1213 PNP Transistors PNP SiliconAPPLICATION: Power Amplifier and Power Switching Applications.MAXIMUM RATINGSTa=25PARAMETERSYMBOL RATING UNITCollector-base voltage VCBO -50 VCollector-emitter voltage VCEO -50 VSOT-89 Emitter-base voltage VEBO -5 V1. BASE Collector current Ic -2 ABase currentIb -0.4 A2. COLLECTOR 1
0.1. Size:195K toshiba
2sa1213o 2sa1213y.pdf 

2SA1213 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1213 Power Amplifier Applications Unit: mmPower Switching Applications Low saturation voltage: VCE (sat) = -0.5 V (max) (IC = -1 A) High speed switching time: tstg = 1.0 s (typ.) Small flat package PC = 1.0 to 2.0 W (mounted on a ceramic substrate) Complementary to 2SC2873 Absolut
0.2. Size:223K toshiba
2sa1213.pdf 

2SA1213 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1213 Power Amplifier Applications Unit: mm Power Switching Applications Low saturation voltage: VCE (sat) = -0.5 V (max) (IC = -1 A) High speed switching time: t = 1.0 s (typ.) stg Small flat package PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SC2873 Max
0.3. Size:128K diodes
2da1213o-y.pdf 

2DA1213O/YPNP SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Epitaxial Planar Die Construction Case: SOT89-3L Ideally Suited for Automated Assembly Processes Case Material: Molded Plastic, "Green Molding Compound. UL Flammability Classification Rating 94V-0 Ideal for Medium Power Switching or Ampl
0.4. Size:999K mcc
2sa1213-o 2sa1213-y.pdf 

2SA1213-O/2SA1213-YElectrical Characteristics @ 25C Unless Otherwise SpecifiedParameter Symbol Min Typ Max Units ConditionsV(BR)CBO -50IC=-100A, IE=0Collector-Base Breakdown Voltage VV(BR)CEO -50IC=-10mA, IB=0Collector-Emitter Breakdown Voltag VV(BR)EBO -5IE=-100A, IC=0Emitter-Base Breakdown Voltage VICBO VCB=-50V, IE=0Collector-Base Cutoff Current -0.1 AIEB
0.5. Size:471K mcc
2sa1213-y.pdf 

2SA1213-OMCCTMMicro Commercial ComponentsMicro Commercial Components 20736 Marilla Street Chatsworth2SA1213-YCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates PNP SiliconRoHS Compliant. See ordering information) Low Saturation voltage: VCE(sat)=0.5V(max.)(IC=1.0A) Epitaxial Transistors Small
0.6. Size:471K mcc
2sa1213-o.pdf 

2SA1213-OMCCTMMicro Commercial ComponentsMicro Commercial Components 20736 Marilla Street Chatsworth2SA1213-YCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates PNP SiliconRoHS Compliant. See ordering information) Low Saturation voltage: VCE(sat)=0.5V(max.)(IC=1.0A) Epitaxial Transistors Small
0.7. Size:422K jiangsu
2sa1213.pdf 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SA1213 TRANSISTOR (PNP) 1. BASE FEATURES 2. COLLECTOR Complementary to 2SC2873 Small Flat Package3. EMITTER Power Amplifier and Switching Applications Low Saturation Voltage High Speed Switching Time MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbo
0.8. Size:183K htsemi
2sa1213.pdf 

2SA1 21 3TRANSISTOR(PNP) SOT-89-3L 1. BASE FEATURES 2. COLLECTOR Complementary to 2SC2873 Small Flat Package3. EMITTER Power Amplifier and Switching Applications Low Saturation Voltage High Speed Switching Time MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V
0.9. Size:520K willas
2sa1213.pdf 

2SA1213-89 Plastic-Encapsulate TransistorsSOTTRANSISTOR (PNP) SOT-89 FEATURES Small Flat Package1. BASE Power Amplifier and Switching Applications 2. COLLECTOR Low Saturation Voltage High Speed Switching Time3. EMITTER Pb-Free package is available RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" MAXIMUM RATINGS (T
0.10. Size:688K semtech
st2sa1213u.pdf 

ST 2SA1213U PNP Silicon Epitaxial Planar Transistor for power amplifier and power switching applications The transistor is subdivided into two groups, O and Y, according to its DC current gain. Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage -VCBO 50 VCollector Emitter Voltage -VCEO 50 VEmitter Base Voltage -VEBO 5 VCollector C
0.11. Size:1604K kexin
2sa1213.pdf 

SMD Type TransistorsPNP Transistors 2SA12131.70 0.1FeaturesLow Saturation Voltage: VCE(sat) = -0.5V (max) (IC = -1A)High Speed Switching Time: tstg = 1.0us (typ.)Small Flat Package0.42 0.10.46 0.1PC = 1 to 2W (mounted on ceramic substrate)Complementary to 2SC28731.Base2.Collector3.EmitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - B
0.12. Size:138K chenmko
2sa1213gp.pdf 

CHENMKO ENTERPRISE CO.,LTD2SA1213GPSMALL FLAT PNP Epitaxial Transistor VOLTAGE 50 Volts CURRENT 2 AmpereAPPLICATION* Power amplifier .FEATURESC-62/SOT-89* Small flat package. (SC-62/SOT-89)* Low saturation voltage VCE(sat)=-0.5V(max.)(IC=-1A) * High speed switching time: tstg= 1.0uSec (typ.)* PC= 1.0 to 2.0W (mounted on ceramic substrate).4.6MAX. 1.6MAX.1.7MAX. 0.4
0.13. Size:143K comchip
2sa1213o-g.pdf 

General Purpose Transistor2SA1213-G Series (PNP)RoHS DeviceFeatures1 : Base -Small flat package.2 : CollectorSOT-89-3L3 : Emitter -Power amplifier and switching -applications.0.181(4.60)0.173(4.40) -Low saturation voltage.0.061(1.55)REF. -High speed switching time.0.102(2.60) 0.167(4.25)0.091(2.30) 0.155(3.94)1 2 3Maximum Ratings (at TA=25C unless other
0.14. Size:143K comchip
2sa1213y-g.pdf 

General Purpose Transistor2SA1213-G Series (PNP)RoHS DeviceFeatures1 : Base -Small flat package.2 : CollectorSOT-89-3L3 : Emitter -Power amplifier and switching -applications.0.181(4.60)0.173(4.40) -Low saturation voltage.0.061(1.55)REF. -High speed switching time.0.102(2.60) 0.167(4.25)0.091(2.30) 0.155(3.94)1 2 3Maximum Ratings (at TA=25C unless other
0.15. Size:1369K pjsemi
2sa1213sq-o 2sa1213sq-y.pdf 

2SA1213SQ PNP TransistorFeatures SOT-89 Low Saturation Voltage High Speed Switching Time As Complementary Type of the NPNTransistor 2SC2873SQ is Recommended.Equivalent Circuit 1.Base 2.Collector 3. Emitter2.CollectorMarking Code : 2SA1213SQ-O : NX 2SA1213SQ-Y : NY1.Base3. Emitter.Absolute Maximum Ratings Ratings at 25 ambient temperature unless oth
0.16. Size:919K cn yfw
2sa1213.pdf 

2SA1213 SOT-89 Ty p PNP Transistors3FeaturesLow Saturation Voltage: VCE(sat) = -0.5V (max) (IC = -1A)2High Speed Switching Time: tstg = 1.0us (typ.)1 1.BaseSmall Flat Package2.Collector3.EmitterPC = 1 to 2W (mounted on ceramic substrate) Simplified outline(SOT-89)Complementary to 2SC2873Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector -
0.17. Size:654K cn hottech
2sa1213.pdf 

2SA1213BIPOLAR TRANSISTOR (PNP)FEATURES Complementary to 2SC2873 Power Amplifier and Switching Application Low Saturation Voltage High Speed Switching Time Surface Mount deviceSOT-89MECHANICAL DATA Case: SOT-89 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0 Weight: 0.055 grams (approximate)MAXIMUM RATINGS (T = 2
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History: KT3130A9
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