A1267 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

. A1267 PNP silicon APPLICATIONGENERAL PURPOSE APPLICATION.MAXIMUM RATINGSTa25PARAMETER SYMBOL RATING UNITCollector-base voltage VCBO -50 VCollector-emitter voltage VCEO -50 VEmitter-base voltage VEBO -5 VCollector current IC -150 mACollector Power Dissipation PC 400 mWJunction Temperature TJ 150Storage Temperature Range Tstg

MCCKTA1267-OMicro Commercial ComponentsTM20736 Marilla Street ChatsworthKTA1267-YMicro Commercial ComponentsCA 91311Phone: (818) 701-4933KTA1267-GRFax: (818) 701-4939Features Excellent hFE Linearity: hFE(0.1mA)/hFE(2.0mA)=0.95(Typ)PNP General Low Noise: NF=1.0dB(Typ.), 10dB(Max.) Complementary to KTC3199Purpose Application Marking: A1267 Epox

SEMICONDUCTOR KTA1267TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION SWITCHING APPLICATION.BFEATURESExcellent hFE Linearity: hFE(0.1mA)/hFE(2mA)=0.95(Typ.).DIM MILLIMETERSOA 3.20 MAXLow Noise : NF=1dB(Typ.), 10dB(Max.).HM B 4.30 MAXC 0.55 MAXComplementary to KTC3199._D 2.40 + 0.15E 1.27F 2.30C_+G 14.00 0.50H 0.60

A1267S PNP SiliconPNP Transistors APPLICATIONGeneral Purpose Applications. MAXIMUM RATINGSTa=25PARAMETER SYMBOL RATING UNITVCBO -50 VCollector-base voltageVCEO -50 VCollector-emitter voltageVEBO -5 VEmitter-base voltage Ic -0.15 ACollector currentPc 0.4Collector Power Dissipation WTj 150Junction Temperat