A1297 Todos los transistores

A1297 PNP silicon APPLICATION Power Amplifier Application, Power Switching Application. MAXIMUM RATINGS Ta 25 PARAMETER SYMBOL RATING UNIT Collector-base voltage VCBO -20 V Collector-emitter voltage VCEO -20 V Emitter-base voltage VEBO -6 V Collector current IC -2 A Collector Power Dissipation PC 400 mW Junction Temperature TJ 150

2SA1297 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1297 Power Amplifier Applications Unit mm Power Switching Applications Low saturation voltage VCE (sat) = -0.5 V (max) @I = -2 A C Complementary to 2SC3267. Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -20 V Collector-emitter voltage VCEO

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO 92S KTA1297 TRANSISTOR (PNP) 1. EMITTER FEATURES 2. COLLECTOR General Purpose Switching Application 3. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -20 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base