A1298 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: A1298  📄📄 

Código: IY

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.2 W

Tensión colector-base (Vcb): 35 V

Tensión colector-emisor (Vce): 30 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 1.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 120 MHz

Capacitancia de salida (Cc): 13 pF

Ganancia de corriente contínua (hFE): 100

Encapsulados: SOT23

  📄📄 Copiar 

 Búsqueda de reemplazo de A1298

- Selecciónⓘ de transistores por parámetros

 

A1298 datasheet

 ..1. Size:473K  fgx
a1298.pdf pdf_icon

A1298

A1298 APPLICATION Low Frequency Power Amplifier Application. PNP silicon Power Switching Applications. MAXIMUM RATINGS Ta 25 PARAMETER SYMBOL RATING UNIT Collector-base voltage VCBO -35 V Collector-emitter voltage VCEO -30 V Emitter-base voltage VEBO -5 V Collector current IC -1500 mA . Collector Power Dissipation PC 200 mW 2 Junction Temp

 0.1. Size:203K  toshiba
2sa1298.pdf pdf_icon

A1298

2SA1298 TOSHIBA Transistor Silicon PNP Epitaxial (PCT process) 2SA1298 Low Frequency Power Amplifier Application Unit mm Power Switching Applications High DC current gain hFE = 100 320 Low saturation voltage V = -0.4 V (max) CE (sat) (I = -500 mA, I = -20 mA) C B Suitable for driver stage of small motor Complementary to 2SC3265 Small package Max

 0.2. Size:189K  toshiba
2sa1298o 2sa1298y.pdf pdf_icon

A1298

2SA1298 TOSHIBA Transistor Silicon PNP Epitaxial (PCT process) 2SA1298 Low Frequency Power Amplifier Application Unit mm Power Switching Applications High DC current gain hFE = 100 to 320 Low saturation voltage VCE (sat) = -0.4 V (max) (IC = -500 mA, IB = -20 mA) Suitable for driver stage of small motor Complementary to 2SC3265 Small package Absolu

 0.3. Size:44K  fairchild semi
ksa1298.pdf pdf_icon

A1298

KSA1298 Low Frequency Power Amplifier 3 Complement to KSC3265 2 SOT-23 1 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -800 mA IB Base Current -160

Otros transistores... A1267S, A1270, A1271, A1273, A1273A, A1276, A1296, A1297, 2SC945, A1300, A1309, A1313, A1317, A1317S, A1320, A1357, A1480