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A1298 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: A1298
   Código: IY
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 35 V
   Tensión colector-emisor (Vce): 30 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 1.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 120 MHz
   Capacitancia de salida (Cc): 13 pF
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: SOT23
 

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A1298 Datasheet (PDF)

 ..1. Size:473K  fgx
a1298.pdf pdf_icon

A1298

A1298 APPLICATION:Low Frequency Power Amplifier Application.PNP silicon Power Switching Applications.MAXIMUM RATINGSTa25PARAMETER SYMBOL RATING UNITCollector-base voltage VCBO -35 VCollector-emitter voltage VCEO -30 VEmitter-base voltage VEBO -5 VCollector current IC -1500 mA.Collector Power Dissipation PC 200 mW2Junction Temp

 0.1. Size:203K  toshiba
2sa1298.pdf pdf_icon

A1298

2SA1298 TOSHIBA Transistor Silicon PNP Epitaxial (PCT process) 2SA1298 Low Frequency Power Amplifier Application Unit: mm Power Switching Applications High DC current gain: hFE = 100~320 Low saturation voltage: V = -0.4 V (max) CE (sat)(I = -500 mA, I = -20 mA) C B Suitable for driver stage of small motor Complementary to 2SC3265 Small package Max

 0.2. Size:189K  toshiba
2sa1298o 2sa1298y.pdf pdf_icon

A1298

2SA1298 TOSHIBA Transistor Silicon PNP Epitaxial (PCT process) 2SA1298 Low Frequency Power Amplifier Application Unit: mmPower Switching Applications High DC current gain: hFE = 100 to 320 Low saturation voltage: VCE (sat) = -0.4 V (max) (IC = -500 mA, IB = -20 mA) Suitable for driver stage of small motor Complementary to 2SC3265 Small package Absolu

 0.3. Size:44K  fairchild semi
ksa1298.pdf pdf_icon

A1298

KSA1298Low Frequency Power Amplifier 3 Complement to KSC32652SOT-2311. Base 2. Emitter 3. CollectorPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage -30 VVCEO Collector-Emitter Voltage -25 VVEBO Emitter-Base Voltage -5 VIC Collector Current -800 mAIB Base Current -160

Otros transistores... A1267S , A1270 , A1271 , A1273 , A1273A , A1276 , A1296 , A1297 , 2SD669A , A1300 , A1309 , A1313 , A1317 , A1317S , A1320 , A1357 , A1480 .

 

 
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