A1505 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: A1505
Código: AZO_AZY_AZI
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15 W
Tensión colector-base (Vcb): 35 V
Tensión colector-emisor (Vce): 30 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 200 MHz
Capacitancia de salida (Cc): 13 pF
Ganancia de corriente contínua (hfe): 70
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de A1505
A1505 datasheet
a1505.pdf
A1505 PNP silicon APPLICATION GENERAL PURPOSE AMPLIFY APPLICATIONS, WITCHING APPLICATION. MAXIMUM RATINGS Ta 25 PARAMETER SYMBOL RATING UNIT Collector-base voltage VCBO -35 V Collector-emitter voltage VCEO -30 V Emitter-base voltage VEBO -5 V Collector current IC -500 mA 1 Collector Power Dissipation PC 150 mW 2 Junction Temperature TJ 15
ad-kta1505.pdf
www.jscj-elec.com AD-KTA1505 series JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. AD-KTA1505 series Plastic-Encapsulated Transistor AD-KTA1505 series Transistor (PNP) FEATURES Excellent hFE linearity Complementary to AD-KTC3876 AEC-Q101 qualified Version 1.0 1 / 6 2021-07-01 www.jscj-elec.com AD-KTA1505 series MAXIMUM RATINGS (T = 25 C unless otherwise spe
kta1505.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 KTA1505 TRANSISTOR PNP FEATURES 1. BASE Excellent hFE linearity 2. EMITTER 3. COLLECTOR Complementary to KTC3876 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -35 V V Collector-Emitter Voltage -30 V CEO V
kta1505s.pdf
SEMICONDUCTOR KTA1505S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES L B L DIM MILLIMETERS Excellent hFE Linearity _ + A 2.93 0.20 B 1.30+0.20/-0.15 hFE(2)=25(Min.) at VCE=-6V, IC=-400mA. C 1.30 MAX 2 Complementary to KTC3876S. 3 D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.0
Otros transistores... A1309 , A1313 , A1317 , A1317S , A1320 , A1357 , A1480 , A1504 , BC549 , A1517 , A1585 , A1585S , A1586 , A1587 , A1588 , A1621 , A1663 .
History: 3DD13005_G7D | TD13005DSMD | 2SD675 | A1586 | BR3DD13005LP7R | 3DD13005ED-V
History: 3DD13005_G7D | TD13005DSMD | 2SD675 | A1586 | BR3DD13005LP7R | 3DD13005ED-V
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
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