A1585 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

A1585 APPLICATION: Low Frequency Amplifier Applications. PNP silicon MAXIMUM RATINGSTa25PARAMETER SYMBOL RATING UNITSOT-89 Collector-base voltage -20 VVCBO1. BASE Collector-emitter voltage -20 VVCEO1 2. COLLECTOR Emitter-base voltage -6 VVEBO2 Collector current -2 AIC3 3. EMITTER Collector Power Dissip

2SB1424 / 2SA1585S Transistors Low VCE(sat) Transistor (-20V, -3A) 2SB1424 / 2SA1585S External dimensions (Unit : mm) Features 1) Low VCE(sat). 2SB1424 2SA1585SVCE(sat) = -0.2V (Typ.) 40.2 20.24.5+0.2(IC/IB = -2A / -0.1A) -0.11.50.11.60.12) Excellent DC current gain characteristics. 3) Complements the 2SD2150 / 2SC4115S. 0.45+0.15(1) (2) (3)-0.05

TransistorsLow VCE(sat) Transistor (*20V, *3A)2SB1424 / 2SA1585SFFeatures FExternal dimensions (Units: mm)1) Low VCE(sat).VCE(sat) = *0.2V (Typ.)(IC/IB = *2A / *0.1A)2) Excellent DC current gain charac-teristics.3) Complements the 2SD2150 /2SC4115S.FStructureEpitaxial planar typePNP silicon transistorFAbsolute maximum ratings (Ta = 25_C)(96-596-A74)201Transist

2SA1585SMCCMicro Commercial ComponentsTM20736 Marilla Street Chatsworth2SA1585S-QMicro Commercial ComponentsCA 91311Phone: (818) 701-49332SA1585S-RFax: (818) 701-4939FeaturesPNP Lead Free Finish/Rohs Compliant ("P"Suffix designates RoHS Compliant. See ordering information) Plastic-Encapsulate Epoxy meets UL 94 V-0 flammability ratingTransistors Moi

2SA1585SMCCMicro Commercial ComponentsTM20736 Marilla Street Chatsworth2SA1585S-QMicro Commercial ComponentsCA 91311Phone: (818) 701-49332SA1585S-RFax: (818) 701-4939FeaturesPNP Lead Free Finish/Rohs Compliant ("P"Suffix designates RoHS Compliant. See ordering information) Plastic-Encapsulate Epoxy meets UL 94 V-0 flammability ratingTransistors Moi

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP EPITAXIAL PLANAR SILICON TRANSISTOR CSA1585BC(9AW)TO-92BCEMarking : CSA 1585 BCABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)DESCRIPTION SYMBOL VALUE UNITCollector -Base Voltage BVCBO 40 VCollector Emitter Voltage BVCEO 20 VEmitter Base Voltage BVEBO 6.0 VCol

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP EPITAXIAL PLANAR SILICON TRANSISTOR CDA1585BC(9AW)TO-92BCEMarking : CDA 1585 BCABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)DESCRIPTION SYMBOL VALUE UNITCollector -Base Voltage BVCBO 20 VCollector Emitter Voltage BVCEO 20 VEmitter Base Voltage BVEBO 6.0 VCol

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors JC T 2SA1585 TRANSISTOR (PNP) SOT-23 FEATURES Low VCE(sat) Excellent DC current gain characteristics. Power dissipation 1. BASE MAXIMUM RATINGS* TA=25 unless otherwise noted 2. EMITTER 3. COLLECTOR Symbol Parameter Value Units VCBO Collector-Base Voltage -20 V VCEO Coll

2SA1585S TO-92S Transistor (PNP) 1. EMITTER TO-92S 2. COLLECTOR 1 2 3 3. BASE Features Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC/IB = 2A/0.1A) Excellent DC current gain characteristics. Power dissipation MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -20 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter

A1585S PNP SiliconPNP Transistors APPLICATIONLow Frequency Applications. MAXIMUM RATINGSTa=25PARAMETER SYMBOL RATING UNITVCBO -20 VCollector-base voltageVCEO -20 VCollector-emitter voltageVEBO -6 VEmitter-base voltage Ic -2 ACollector currentIcp -5 ACollector current (Pluse)Pc 0.4Collector Power Dissipation W