A1621 Todos los transistores

A1621 PNP silicon APPLICATION Audio Power Amplifier Applications. MAXIMUM RATINGS Ta 25 PARAMETER SYMBOL RATING UNIT Collector-base voltage VCBO -35 V Collector-emitter voltage VCEO -30 V Emitter-base voltage VEBO -5 V Collector current IC -800 mA 1 Collector Power Dissipation PC 200 mW 2 Junction Temperature TJ 150 Storage Temperatur

2SA1621 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1621 Audio Power Amplifier Applications Unit mm High hFE h = 100 320 FE Complementary to 2SC4210 Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -35 V Collector-emitter voltage VCEO -30 V Emitter-base voltage VEBO -5 V Collector current IC -

SMD Type Transistors PNP Transistors 2SA1621 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=-800mA 1 2 Collector Emitter Voltage VCEO=-30V +0.05 0.95+0.1 -0.1 0.1 -0.01 Complementary to 2SC4210 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector