A1663 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

A1663PNP Transistors PNP SiliconAPPLICATION: High Current Applications.MAXIMUM RATINGSTa=25PARAMETER SYMBOL RATING UNITSOT-89 Collector-base voltage VCBO -30 VCollector-emitter voltage VCEO -30 V1. BASE Emitter-base voltage VEBO -5 V2. COLLECTOR 1 Collector current Ic -1.5 A2 Base currentIb -0.3 A3. EMITTE

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L KTA1663 TRANSISTOR (PNP) 1. BASE FEATURES High current applications 2. COLLECTOR Complementary to KTC4375 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage

SEMICONDUCTOR KTA1663TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH CURRENT APPLICATION. FEATURESAC1W (Mounted on Ceramic Substrate).HSmall Flat Package. GComplementary to KTC4375.DIM MILLIMETERSA 4.70 MAXD _+D B 2.50 0.20K C 1.70 MAXD 0.45+0.15/-0.10MAXIMUM RATING (Ta=25)F FE 4.25 MAX_+F 1.50 0.10CHARACTERISTIC SYMBOL RATING UNITG

KTA1663TRANSISTOR (PNP) SOT-89 FEATURES High current applications 1. BASE Complementary to KTC4375 2. COLLECTOR 1 2 3. EMITTER 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1.5 A PC Coll

KTA1663 SOT-89 Transistor(PNP)1. BASE 2. COLLECTOR SOT-891 4.62 B4.41.63. EMITTER 1.81.43 1.4Features2.64.252.43.75 High current applications 0.8MIN Complementary to KTC4375 0.530.400.480.442x)0.13 B0.35 0.371.53.0MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter Valu

KTA1663PNP Epitaxial Planar TransistorsP b Lead(Pb)-Free1. BASE2. COLLECTOR13. EMITTER23SOT-89ABSOLUTE MAXIMUM RATINGS (TA=25C)Rating Symbol Limits UnitVCBO VCollector-Base Voltage-35VCEOVCollector-Emitter Voltage -30VEBOVEmitter-Base Voltage -5.0Collector CurrentIC A-1.5Collector Power Dissipation PD 0.5 WTjJunction Temperature -55 to +150

ST 2SA1663U PNP Silicon Epitaxial Planar Transistor for high current application Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage -VCBO 30 VCollector Emitter Voltage -VCEO 30 VEmitter Base Voltage -VEBO 5 VCollector Current -IC 1.5 ABase Current -IB 0.3 A0.5 Ptot W Total Power Dissipation1 1) Junction Temperature Tj 150

SEMICONDUCTORFTA1663TECHNICAL DATAPNP TransistorAFEATURES CH High current applications G Complementary to FTC4375 DDMAXIMUM RATINGS (TA=25 unless otherwise noted)KF FDIM MILLIMETERSSymbol Parameter Value UnitsA 4.70 MAX_+B 2.50 0.20VCBO Collector-Base Voltage -30 V C 1.70 MAX1 2 3D 0.45+0.15/-0.10VCEO Collector-Emitter Voltage -30 V E 4.25 MAX

SMD Type TransistorsPNP TransistorsKTA16631.70 0.1 Features 1W (Mounted on Ceramic Substrate) Small Flat Package Comlementary to KTC43750.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -30 Collector - Emitter Voltage VCEO -30 V Emitter - Base Voltage VEBO -

KTA1663PNP-Silicon General use Transistors0.8W 1.5A25V 4 ApplicationsCan be used for switching and amplifying in various 2 1 3SOT-89 electrical and electronic circuit. Maximum ratings Parameters Symbol Rating UnitV VCEO 25Collector-emitter voltage (IB=0) VCBO 30 VCollector-base voltageIE=0 VEBO 6 VEmitter-base voltageIC=0 IC 1.5 ACol