A1663 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

A1663 PNP Transistors PNP Silicon APPLICATION High Current Applications. MAXIMUM RATINGS Ta=25 PARAMETER SYMBOL RATING UNIT SOT-89 Collector-base voltage VCBO -30 V Collector-emitter voltage VCEO -30 V 1. BASE Emitter-base voltage VEBO -5 V 2. COLLECTOR 1 Collector current Ic -1.5 A 2 Base current Ib -0.3 A 3. EMITTE

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L KTA1663 TRANSISTOR (PNP) 1. BASE FEATURES High current applications 2. COLLECTOR Complementary to KTC4375 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage

SEMICONDUCTOR KTA1663 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. FEATURES A C 1W (Mounted on Ceramic Substrate). H Small Flat Package. G Complementary to KTC4375. DIM MILLIMETERS A 4.70 MAX D _ + D B 2.50 0.20 K C 1.70 MAX D 0.45+0.15/-0.10 MAXIMUM RATING (Ta=25 ) F F E 4.25 MAX _ + F 1.50 0.10 CHARACTERISTIC SYMBOL RATING UNIT G

KTA1663 TRANSISTOR (PNP) SOT-89 FEATURES High current applications 1. BASE Complementary to KTC4375 2. COLLECTOR 1 2 3. EMITTER 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1.5 A PC Coll

KTA1663 SOT-89 Transistor(PNP) 1. BASE 2. COLLECTOR SOT-89 1 4.6 2 B 4.4 1.6 3. EMITTER 1.8 1.4 3 1.4 Features 2.6 4.25 2.4 3.75 High current applications 0.8 MIN Complementary to KTC4375 0.53 0.40 0.48 0.44 2x) 0.13 B 0.35 0.37 1.5 3.0 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Valu

KTA1663 PNP Epitaxial Planar Transistors P b Lead(Pb)-Free 1. BASE 2. COLLECTOR 1 3. EMITTER 2 3 SOT-89 ABSOLUTE MAXIMUM RATINGS (TA=25 C) Rating Symbol Limits Unit VCBO V Collector-Base Voltage -35 VCEO V Collector-Emitter Voltage -30 VEBO V Emitter-Base Voltage -5.0 Collector Current IC A -1.5 Collector Power Dissipation PD 0.5 W Tj Junction Temperature -55 to +150

SEMICONDUCTOR FTA1663 TECHNICAL DATA PNP Transistor A FEATURES C H High current applications G Complementary to FTC4375 D D MAXIMUM RATINGS (TA=25 unless otherwise noted) K F F DIM MILLIMETERS Symbol Parameter Value Units A 4.70 MAX _ + B 2.50 0.20 VCBO Collector-Base Voltage -30 V C 1.70 MAX 1 2 3 D 0.45+0.15/-0.10 VCEO Collector-Emitter Voltage -30 V E 4.25 MAX

SMD Type Transistors PNP Transistors KTA1663 1.70 0.1 Features 1W (Mounted on Ceramic Substrate) Small Flat Package Comlementary to KTC4375 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -30 Collector - Emitter Voltage VCEO -30 V Emitter - Base Voltage VEBO -

KTA1663 PNP-Silicon General use Transistors 0.8W 1.5A 25V 4 Applications Can be used for switching and amplifying in various 2 1 3 SOT-89 electrical and electronic circuit. Maximum ratings Parameters Symbol Rating Unit V VCEO 25 Collector-emitter voltage (IB=0) VCBO 30 V Collector-base voltage IE=0 VEBO 6 V Emitter-base voltage IC=0 IC 1.5 A Col