A708 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

A708 PNP silicon APPLICATIONGengeral Purpose Applications.PARAMETER SYMBOL RATING UNITCollector-base voltage VCBO -80 VCollector-emitter voltage VCEO -60 VEmitter-base voltage VEBO -8 VCollector current IC -700 mACollector Power Dissipation PC 800 mWJunction Temperature TJ 150Storage Temperature Range Tstg 55~150ELE

KSA708Low Frequency Amplifier & Medium Speed Switching Complement to KSC1008 Collector-Base Voltage : VCBO= -80V Collector Power Dissipation : PC=800mW Suffix -C means Center Collector (1. Emitter 2. Collector 3. Base)TO-9211. Emitter 2. Base 3. CollectorPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Para

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN/PNP EPITAXIAL PLANAR SILICON TRANSISTORS CSC1008 NPNCSA708 PNPTO-92CBELow Frequency Amplifier.ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)DESCRIPTION SYMBOL VALUE UNITCollector -Base Voltage VCBO 80 VCollector -Emitter Voltage VCEO 60 VEmitter -Base Voltage VEBO

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate TransistorsTO 92 KSA708 TRANSISTOR (PNP)1.EMITTERFEATURES 2.BASE Low Saturation Medium Current Application3.COLLECTOR Equivalent Circuit A708=Device code Solid dot=Green molding compound device, if none,the normal deviceXXX=Code 1

SEMICONDUCTOR KTA708TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORVOLTAGE REGULATOR, RELAY,LAMP DRIVER, INDUSTRIAL USEB CFEATURESHigh Voltage : VCEO=-60V(Min.).High Current : IC(Max.)=-1A.N DIM MILLIMETERSHigh Transition Frequency : fT=150MHz(Typ.).A 4.70 MAXEKWide Area of Safe Operation. B 4.80 MAXGC 3.70 MAXDComplementary to KTC1008.D 0.45E 1.00

Transistors2SA708

WEITRONKSA708PNP Plastic-Encapsulate TransistorP b Lead(Pb)-Free1. EMITTER2. COLLECTOR3. BASEFEATURES : Low Saturation Medium Current ApplicationTO-92MAXIMUM RATINGS (T unless otherwise noted)A=25CParameter Symbol Value UnitsCollector-Base Voltage VVCBO -80Collector-Emitter Voltage VVCEO -60Emitter-Base Voltage -8 VVEBOACollector Current -Continuous

SEMICONDUCTORFTA708TECHNICAL DATATRANSISTOR (PNP) B CFEATURES Low Saturation Medium Current Application DIM MILLIMETERSA 4.70 MAXE B 4.80 MAXGC 3.70 MAXDD 0.55 MAXE 1.00F 1.27G 0.85MAXIMUM RATINGS (Ta=25 unless otherwise noted) H 0.45_HJ 14.00 + 0.50L 2.30F FSymbol Parameter Value Unit M 0.51 MAXVCBO Collector-Base Voltage -80 V 1 2 31.