A708 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

A708 PNP silicon APPLICATION Gengeral Purpose Applications. PARAMETER SYMBOL RATING UNIT Collector-base voltage VCBO -80 V Collector-emitter voltage VCEO -60 V Emitter-base voltage VEBO -8 V Collector current IC -700 mA Collector Power Dissipation PC 800 mW Junction Temperature TJ 150 Storage Temperature Range Tstg 55 150 ELE

KSA708 Low Frequency Amplifier & Medium Speed Switching Complement to KSC1008 Collector-Base Voltage VCBO= -80V Collector Power Dissipation PC=800mW Suffix -C means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Para

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN/PNP EPITAXIAL PLANAR SILICON TRANSISTORS CSC1008 NPN CSA708 PNP TO-92 CBE Low Frequency Amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified) DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage VCBO 80 V Collector -Emitter Voltage VCEO 60 V Emitter -Base Voltage VEBO

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO 92 KSA708 TRANSISTOR (PNP) 1.EMITTER FEATURES 2.BASE Low Saturation Medium Current Application 3.COLLECTOR Equivalent Circuit A708=Device code Solid dot=Green molding compound device, if none,the normal device XXX=Code 1

SEMICONDUCTOR KTA708 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR VOLTAGE REGULATOR, RELAY, LAMP DRIVER, INDUSTRIAL USE B C FEATURES High Voltage VCEO=-60V(Min.). High Current IC(Max.)=-1A. N DIM MILLIMETERS High Transition Frequency fT=150MHz(Typ.). A 4.70 MAX E K Wide Area of Safe Operation. B 4.80 MAX G C 3.70 MAX D Complementary to KTC1008. D 0.45 E 1.00

Transistors 2SA708

WEITRON KSA708 PNP Plastic-Encapsulate Transistor P b Lead(Pb)-Free 1. EMITTER 2. COLLECTOR 3. BASE FEATURES Low Saturation Medium Current Application TO-92 MAXIMUM RATINGS (T unless otherwise noted) A=25 C Parameter Symbol Value Units Collector-Base Voltage V VCBO -80 Collector-Emitter Voltage V VCEO -60 Emitter-Base Voltage -8 V VEBO A Collector Current -Continuous

SEMICONDUCTOR FTA708 TECHNICAL DATA TRANSISTOR (PNP) B C FEATURES Low Saturation Medium Current Application DIM MILLIMETERS A 4.70 MAX E B 4.80 MAX G C 3.70 MAX D D 0.55 MAX E 1.00 F 1.27 G 0.85 MAXIMUM RATINGS (Ta=25 unless otherwise noted) H 0.45 _ H J 14.00 + 0.50 L 2.30 F F Symbol Parameter Value Unit M 0.51 MAX VCBO Collector-Base Voltage -80 V 1 2 3 1.