A720
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: A720
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.63
W
Tensión colector-base (Vcb): 60
V
Tensión colector-emisor (Vce): 50
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 0.5
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 200
MHz
Capacitancia de salida (Cc): 6
pF
Ganancia de corriente contínua (hfe): 85
Paquete / Cubierta:
TO92
Búsqueda de reemplazo de transistor bipolar A720
A720
Datasheet (PDF)
..1. Size:232K fgx
a720.pdf
A720PNP silicon APPLICATIONGeneral Purpose Applications.MAXIMUM RATINGSTa25PARAMETER SYMBOL RATING UNITCollector-base voltage VCBO -60 VCollector-emitter voltage VCEO -50 VEmitter-base voltage VEBO -5 VCollector current IC -500 mACollector Power Dissipation PC 625 mWJunction Temperature TJ 150Storage Temperature
0.1. Size:51K panasonic
2sa719 2sa720.pdf
Transistor2SA719, 2SA720Silicon PNP epitaxial planer typeFor low-frequency power amplification and driver amplificationUnit: mmComplementary to 2SC1317 and 2SC13185.0 0.2 4.0 0.2FeaturesComplementary pair with 2SC1317 and 2SC1318.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to 2SA719 30VCBO V+0.2 +0.2base voltage 2SA720 60 0.45
0.2. Size:42K panasonic
2sa720a e.pdf
Transistor2SA720ASilicon PNP epitaxial planer typeFor low-frequency driver amplificationUnit: mmComplementary to 2SC1318A5.0 0.2 4.0 0.2FeaturesHigh collector to emitter voltage VCEO.Optimum for the driver stage of a low-frequency and 25 to 30Woutput amplifier.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.2 +0.2Collector to base voltage VCBO
0.4. Size:507K secos
2sa720.pdf
2SA720 -0.5 A, -60 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES For low-frequency power amplification and driver amplification. G HEmitterCollector Base CLASSIFICATION OF hFE JA DProduct-Rank 2SA720-Q 2SA720-R 2SA720-SMillimeterREF.B M
0.5. Size:107K cdil
csa719 csa720.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP SILICON PLANAR EPITAXIAL TRANSISTORS CSA719CSA720TO-92Plastic PackageBCEApplicationsAF Output Amplifier and DriverABSOLUTE MAXIMUM RATING (Ta=25C )DESCRIPTION SYMBOL CSA719 CSA720 UNITCollector Base Voltage VCBO 30 60 VCollector Emitter Voltage VCEO 25 50 VEmitter Base Vo
0.6. Size:213K first silicon
fta720.pdf
SEMICONDUCTORFTA719 / 720TECHNICAL DATAFTA719/FTA720 TRANSISTOR (PNP)FEATURES B C For Low-Frequency Power Amplification and Driver Amplification MAXIMUM RATINGS (Ta=25 unless otherwise noted) DIM MILLIMETERSA 4.70 MAXEB 4.80 MAXGSymbol Parameter Value Unit C 3.70 MAXDD 0.55 MAXVCBO Collector-Base Voltage FTA719 -30E 1.00VF 1.27FTA720 -60G 0.85
Otros transistores... 2SA1771
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