A838 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: A838

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.25 W

Tensión colector-base (Vcb): 30 V

Tensión colector-emisor (Vce): 20 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.03 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 300 MHz

Ganancia de corriente contínua (hFE): 70

Encapsulados: TO92L

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A838 datasheet

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 a838.pdf pdf_icon

A838

A838 APPLICATION High Frequency Amplifier Applications. PNP silicon MAXIMUM RATINGS Ta 25 PARAMETER SYMBOL RATING UNIT Collector-base voltage VCBO -30 V Collector-emitter voltage VCEO -20 V TO-92L 1 Emitter-base voltage VEBO -5 V 1. Emitter 2. Collector 3. Base Collector current IC -30 mA Collector Power Dissipation PC 250 mW Ju

 0.1. Size:41K  panasonic
 2sa838 e.pdf pdf_icon

A838

Transistor 2SA838 Silicon PNP epitaxial planer type For high-frequency amplification Unit mm Complementary to 2SC1359 5.0 0.2 4.0 0.2 Features High transition frequency fT. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 30 V +0.2 +0.2 Collector to emitter voltage VCEO 20 V 0.45 0.1 0.45 0.1 1.27 1.27 Emitter to ba

 0.2. Size:37K  panasonic
 2sa838.pdf pdf_icon

A838

Transistor 2SA838 Silicon PNP epitaxial planer type For high-frequency amplification Unit mm Complementary to 2SC1359 5.0 0.2 4.0 0.2 Features High transition frequency fT. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 30 V +0.2 +0.2 Collector to emitter voltage VCEO 20 V 0.45 0.1 0.45 0.1 1.27 1.27 Emitter to ba

Otros transistores... A2071, A327A, A3355, A708, A720, A751, A773, A817, BD136, A844, A9015, A928A, A931, A933, A933AS, A940, A950