A838 Datasheet, Equivalent, Cross Reference Search
Type Designator: A838
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 300 MHz
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: TO92L
A838 Transistor Equivalent Substitute - Cross-Reference Search
A838 Datasheet (PDF)
a838.pdf
A838 APPLICATION: High Frequency Amplifier Applications. PNP silicon MAXIMUM RATINGSTa25PARAMETER SYMBOL RATING UNITCollector-base voltage VCBO -30 VCollector-emitter voltage VCEO -20 VTO-92L1Emitter-base voltage VEBO -5 V1. Emitter 2. Collector 3. BaseCollector current IC -30 mACollector Power Dissipation PC 250 mWJu
2sa838 e.pdf
Transistor2SA838Silicon PNP epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SC13595.0 0.2 4.0 0.2FeaturesHigh transition frequency fT.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base voltage VCBO 30 V+0.2 +0.2Collector to emitter voltage VCEO 20 V 0.45 0.1 0.45 0.11.27 1.27Emitter to ba
2sa838.pdf
Transistor2SA838Silicon PNP epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SC13595.0 0.2 4.0 0.2FeaturesHigh transition frequency fT.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base voltage VCBO 30 V+0.2 +0.2Collector to emitter voltage VCEO 20 V 0.45 0.1 0.45 0.11.27 1.27Emitter to ba
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
