A931 Todos los transistores

 ..1. Size:238K  fgx
 a931.pdf

A931 PNP silicon APPLICATION Audio Amplifier Applications. MAXIMUM RATINGS Ta 25 PARAMETER SYMBOL RATING UNIT Collector-base voltage VCBO -80 V Collector-emitter voltage VCEO -60 V TO-92L 1 Emitter-base voltage VEBO -8 V 1. Emitter 2. Collector 3. Base Collector current IC -700 mA Collector Power Dissipation PC 1W Junction

 0.1. Size:41K  fairchild semi
 ksa931.pdf

KSA931 Low Frequency Amplifier & Medium Speed Switching Complement to KSC2331 Collector-Base Voltage VCBO= -80V Collector Power Dissipation PC=1W TO-92L 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter V

 0.2. Size:71K  samsung
 ksa931.pdf

KSA931 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER TO-92L MEDIUM SPEED SWITCHING Complement to KSC2331 Collector-Base Voltage VCBO= -80V Collector Dissipation PC=1W ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -80 V Collector-Emitter Voltage VCEO -60 V Emitter-Base Voltage VEBO -8 V Collector Current IC -

 0.3. Size:268K  vishay
 sia931dj.pdf

SiA931DJ Vishay Siliconix Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Gen III Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) Thermally Enhanced PowerPAK SC-70 Package 0.065 at VGS = - 10 V - 4.5a - Small Footprint Area 0.080 at VGS = - 6 V - 30 - 4.5a 4.1 nC - Low On-Resistance 0.100 at VGS = - 4.5 V - 4.5a 100 % Rg Test

 0.4. Size:203K  lge
 ksa931.pdf

KSA931 TO-92MOD Transistor (PNP) TO-92MOD 1.EMITTER 1 2 2.COLLECTOR 3 3.BASE Features 5.800 6.200 Low Frequency Amplifier Medium Speed Switching 8.400 8.800 0.900 1.100 0.400 MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.600 Symbol Parameter Value Units 13.800 14.200 VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -60 V 1.500 TYP VE

 0.5. Size:209K  lge
 ksa931 to-92l.pdf

KSA931 TO-92L Transistor (PNP) TO-92L 1.EMITTER 2.COLLECTOR 3.BASE 4.700 2 3 5.100 1 Features 7.800 Low Frequency Amplifier 8.200 Medium Speed Switching 0.600 0.800 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units 0.350 0.550 VCBO Collector-Base Voltage -80 V 13.800 14.200 VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base

 0.6. Size:305K  analog power
 ama931pe.pdf

Analog Power AMA931PE Dual P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 220 @ VGS = -4.5V -2.2 Low thermal impedance -30 300 @ VGS = -2.5V -1.9 Fast switching speed DFN2x2-6L Typical Applications Load switches Bottom View Low power buck/boost converters Power routing in batt