A931 PNP silicon APPLICATION: Audio Amplifier Applications.MAXIMUM RATINGSTa25PARAMETER SYMBOL RATING UNITCollector-base voltageVCBO -80 VCollector-emitter voltageVCEO -60 VTO-92L1Emitter-base voltage VEBO -8 V1. Emitter 2. Collector 3. BaseCollector currentIC -700 mACollector Power DissipationPC 1WJunction

KSA931Low Frequency Amplifier & Medium Speed Switching Complement to KSC2331 Collector-Base Voltage : VCBO= -80V Collector Power Dissipation : PC=1WTO-92L11. Emitter 2. Collector 3. BasePNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage -80 VVCEO Collector-Emitter V

KSA931 PNP EPITAXIAL SILICON TRANSISTORLOW FREQUENCY AMPLIFIERTO-92LMEDIUM SPEED SWITCHING Complement to KSC2331 Collector-Base Voltage VCBO= -80V Collector Dissipation PC=1WABSOLUTE MAXIMUM RATINGS (T =25 )ACharacteristic Symbol Rating UnitCollector-Base Voltage VCBO -80 VCollector-Emitter Voltage VCEO -60 VEmitter-Base Voltage VEBO -8 VCollector Current IC -

SiA931DJVishay SiliconixDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Gen III Power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) Thermally Enhanced PowerPAKSC-70 Package0.065 at VGS = - 10 V - 4.5a- Small Footprint Area0.080 at VGS = - 6 V - 30- 4.5a 4.1 nC- Low On-Resistance0.100 at VGS = - 4.5 V - 4.5a 100 % Rg Test

KSA931 TO-92MOD Transistor (PNP)TO-92MOD1.EMITTER 1 2 2.COLLECTOR 3 3.BASE Features5.8006.200 Low Frequency Amplifier Medium Speed Switching 8.4008.8000.9001.1000.400MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.600Symbol Parameter Value Units13.80014.200VCBO Collector-Base Voltage -80 VVCEO Collector-Emitter Voltage -60 V 1.500 TYPVE

KSA931 TO-92L Transistor (PNP)TO-92L1.EMITTER 2.COLLECTOR 3.BASE 4.700 2 3 5.1001Features7.800 Low Frequency Amplifier8.200 Medium Speed Switching 0.6000.800MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units0.3500.550VCBO Collector-Base Voltage -80 V13.80014.200VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base

Analog Power AMA931PEDual P-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)220 @ VGS = -4.5V -2.2 Low thermal impedance -30300 @ VGS = -2.5V -1.9 Fast switching speed DFN2x2-6L Typical Applications: Load switches Bottom View Low power buck/boost converters Power routing in batt