SK3122 Todos los transistores

 ..1. Size:70K  njs
 sk3122.pdf

 0.1. Size:120K  sanyo
 2sk3122.pdf

Ordering number ENN6105A N-Channel Silicon MOSFET 2SK3122 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2062A 4V drive. [2SK3122] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 Gate 2 Drain 0.75 3 Source SANYO PCP (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25 C

 9.1. Size:184K  1
 2sk3124.pdf

Power F-MOS FETs 2SK3124 Silicon N-Channel Power F-MOS FET Features unit mm Avalanche energy capacity guaranteed 6.5 0.1 2.3 0.1 5.3 0.1 High-speed switching 4.35 0.1 0.5 0.1 No secondary breakdown High electrostatic breakdown voltage Applications 1.0 0.1 0.1 0.05 High-speed switching (switching power supply) 0.5 0.1 0.75 0.1 For high-frequency power amplif

 9.2. Size:215K  1
 2sk312 2sk313.pdf

 9.3. Size:160K  toshiba
 2sk3127.pdf

2SK3127 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS VI) 2SK3127 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications Low drain-source ON resistance RDS (ON) = 9.5 (typ.) High forward transfer admittance Yfs = 38 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 30 V) Enhancement-mode Vth = 1.5 to 3.0 V

 9.4. Size:136K  toshiba
 2sk3129.pdf

2SK3129 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSVI) 2SK3129 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications Low drain-source ON resistance RDS (ON) = 5.5 m (typ.) High forward transfer admittance Yfs = 70 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 30 V) Enhancement mode Vth = 0.8 to 2.0 V

 9.5. Size:152K  toshiba
 2sk3128.pdf

2SK3128 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSVI) 2SK3128 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications Low drain-source ON resistance RDS (ON) = 9.5 m (typ.) High forward transfer admittance Yfs = 40 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 30 V) Enhancement mode Vth = 1.5 3.0 V (VDS =

 9.6. Size:151K  toshiba
 2sk3126.pdf

2SK3126 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK3126 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.48 (typ.) High forward transfer admittance Yfs = 7.5 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 450 V) Enhancement mode Vth = 2.4 3.4 V (VDS = 10 V, ID = 1 mA) Absolute Max

 9.7. Size:205K  toshiba
 2sk3125.pdf

2SK3125 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSVI) 2SK3125 DC-DC Converter, Relay Drive and Unit mm Motor Drive Applications Low drain-source ON resistance RDS (ON) = 5.3 m (typ.) High forward transfer admittance Yfs = 60 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 30 V) Enhancement model Vth = 1.5 3.0 V (VDS =

 9.8. Size:125K  sanyo
 2sk3121.pdf

Ordering number ENN6104A N-Channel Silicon MOSFET 2SK3121 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2062A 2.5V drive. [2SK3121] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 Gate 2 Drain 0.75 3 Source SANYO PCP (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25 C

 9.9. Size:136K  sanyo
 2sk3120.pdf

Ordering number ENN6103A N-Channel Silicon MOSFET 2SK3120 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2062A 4V drive. [2SK3120] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 Gate 2 Drain 0.75 3 Source SANYO PCP (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25 C

 9.10. Size:70K  njs
 sk3124a.pdf

 9.11. Size:286K  inchange semiconductor
 2sk3129.pdf

isc N-Channel MOSFET Transistor 2SK3129 FEATURES Drain Current I = 60A@ T =25 D C Drain Source Voltage V = 50V(Min) DSS Static Drain-Source On-Resistance R = 7m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid dri

 9.12. Size:286K  inchange semiconductor
 2sk3128.pdf

isc N-Channel MOSFET Transistor 2SK3128 FEATURES Drain Current I = 60A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 12m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid dr

 9.13. Size:356K  inchange semiconductor
 2sk3127b.pdf

isc N-Channel MOSFET Transistor 2SK3127B FEATURES Drain Current I = 45A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 12m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d

 9.14. Size:285K  inchange semiconductor
 2sk3124.pdf

isc N-Channel MOSFET Transistor 2SK3124 FEATURES Drain Current I = 0.5A@ T =25 D C Drain Source Voltage V = 400V(Min) DSS Static Drain-Source On-Resistance R = 23 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. ABS

 9.15. Size:282K  inchange semiconductor
 2sk3127k.pdf

isc N-Channel MOSFET Transistor 2SK3127K FEATURES Drain Current I = 45A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 12m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d

 9.16. Size:279K  inchange semiconductor
 2sk3126.pdf

isc N-Channel MOSFET Transistor 2SK3126 FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V =450V(Min) DSS Static Drain-Source On-Resistance R = 0.65 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. ABS

 9.17. Size:299K  inchange semiconductor
 2sk312.pdf

isc N-Channel MOSFET Transistor 2SK312 FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage V = 400V(Min) DSS Static Drain-Source On-Resistance R = 0.9 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid