Биполярный транзистор SK3122
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: SK3122
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.4
W
Макcимально допустимое напряжение коллектор-база (Ucb): 50
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 4
V
Макcимальный постоянный ток коллектора (Ic): 0.5
A
Граничная частота коэффициента передачи тока (ft): 200
MHz
Статический коэффициент передачи тока (hfe): 150
Корпус транзистора:
TO92
Аналоги (замена) для SK3122
SK3122
Datasheet (PDF)
0.1. Size:120K sanyo
2sk3122.pdf 
Ordering number:ENN6105AN-Channel Silicon MOSFET2SK3122Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2062A 4V drive.[2SK3122]4.51.51.60.40.53 2 10.41.53.0 1 : Gate2 : Drain0.753 : SourceSANYO : PCP(Bottom view)SpecificationsAbsolute Maximum Ratings at Ta = 25C
9.1. Size:184K 1
2sk3124.pdf 
Power F-MOS FETs2SK3124Silicon N-Channel Power F-MOS FET Featuresunit: mm Avalanche energy capacity guaranteed6.50.12.30.15.30.1 High-speed switching4.350.10.50.1 No secondary breakdown High electrostatic breakdown voltage Applications1.00.10.10.05 High-speed switching (switching power supply)0.50.10.750.1 For high-frequency power amplif
9.3. Size:160K toshiba
2sk3127.pdf 
2SK3127 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS VI) 2SK3127 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mmApplications Low drain-source ON resistance: RDS (ON) = 9.5 (typ.) High forward transfer admittance: |Yfs| = 38 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 30 V) Enhancement-mode: Vth = 1.5 to 3.0 V
9.4. Size:136K toshiba
2sk3129.pdf 
2SK3129 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) 2SK3129 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mmApplications Low drain-source ON resistance: RDS (ON) = 5.5 m (typ.) High forward transfer admittance: |Yfs| = 70 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 30 V) Enhancement mode: Vth = 0.8 to 2.0 V
9.5. Size:152K toshiba
2sk3128.pdf 
2SK3128 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) 2SK3128 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mmApplications Low drain-source ON resistance : RDS (ON) = 9.5 m (typ.) High forward transfer admittance : |Yfs| = 40 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 30 V) Enhancement mode : Vth = 1.5~3.0 V (VDS =
9.6. Size:151K toshiba
2sk3126.pdf 
2SK3126 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3126 Switching Regulator Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 0.48 (typ.) High forward transfer admittance : |Yfs| = 7.5 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 450 V) Enhancement mode : Vth = 2.4~3.4 V (VDS = 10 V, ID = 1 mA) Absolute Max
9.7. Size:205K toshiba
2sk3125.pdf 
2SK3125 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) 2SK3125 DC-DC Converter, Relay Drive and Unit: mmMotor Drive Applications Low drain-source ON resistance: RDS (ON) = 5.3 m (typ.) High forward transfer admittance: |Yfs| = 60 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 30 V) Enhancement model: Vth = 1.5~3.0 V (VDS =
9.8. Size:125K sanyo
2sk3121.pdf 
Ordering number:ENN6104AN-Channel Silicon MOSFET2SK3121Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2062A 2.5V drive.[2SK3121]4.51.51.60.40.53 2 10.41.53.0 1 : Gate2 : Drain0.753 : SourceSANYO : PCP(Bottom view)SpecificationsAbsolute Maximum Ratings at Ta = 25C
9.9. Size:136K sanyo
2sk3120.pdf 
Ordering number:ENN6103AN-Channel Silicon MOSFET2SK3120Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2062A 4V drive.[2SK3120]4.51.51.60.40.53 2 10.41.53.0 1 : Gate2 : Drain0.753 : SourceSANYO : PCP(Bottom view)SpecificationsAbsolute Maximum Ratings at Ta = 25C
9.11. Size:286K inchange semiconductor
2sk3129.pdf 
isc N-Channel MOSFET Transistor 2SK3129FEATURESDrain Current : I = 60A@ T =25D CDrain Source Voltage: V = 50V(Min)DSSStatic Drain-Source On-Resistance: R = 7m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid dri
9.12. Size:286K inchange semiconductor
2sk3128.pdf 
isc N-Channel MOSFET Transistor 2SK3128FEATURESDrain Current : I = 60A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 12m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid dr
9.13. Size:356K inchange semiconductor
2sk3127b.pdf 
isc N-Channel MOSFET Transistor 2SK3127BFEATURESDrain Current : I = 45A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 12m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d
9.14. Size:285K inchange semiconductor
2sk3124.pdf 
isc N-Channel MOSFET Transistor 2SK3124FEATURESDrain Current : I = 0.5A@ T =25D CDrain Source Voltage: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 23(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.ABS
9.15. Size:282K inchange semiconductor
2sk3127k.pdf 
isc N-Channel MOSFET Transistor 2SK3127KFEATURESDrain Current : I = 45A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 12m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d
9.16. Size:279K inchange semiconductor
2sk3126.pdf 
isc N-Channel MOSFET Transistor 2SK3126FEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V =450V(Min)DSSStatic Drain-Source On-Resistance: R = 0.65(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.ABS
9.17. Size:299K inchange semiconductor
2sk312.pdf 
isc N-Channel MOSFET Transistor 2SK312FEATURESDrain Current : I = 12A@ T =25D CDrain Source Voltage: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 0.9(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
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