SK3849
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SK3849
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1
W
Tensión colector-base (Vcb): 60
V
Tensión colector-emisor (Vce): 50
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 1.5
A
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 200
MHz
Ganancia de corriente contínua (hfe): 120
Paquete / Cubierta:
TO92
Búsqueda de reemplazo de transistor bipolar SK3849
SK3849
Datasheet (PDF)
9.2. Size:213K 1
2sk3843.pdf 
2SK3843 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSIII) 2SK3843 Switching Regulator, DC/DC Converter and Motor Drive Unit: mmApplications Low drain-source ON resistance : RDS (ON) = 2.7 m (typ.) High forward transfer admittance : |Yfs| = 120 S (typ.) Low leakage current : IDSS = 10 A (max) (VDS = 40 V) Enhancement mode : Vth = 1.5~3.0 V (VDS
9.3. Size:216K toshiba
2sk3842.pdf
2SK3842 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) 2SK3842 Switching Regulator Applications, DC-DC Converter and Unit: mmMotor Drive Applications Low drain-source ON resistance: RDS (ON) =4.6 m (typ.) High forward transfer admittance: |Yfs| = 93 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 60 V) Enhancement model: Vth
9.4. Size:997K toshiba
2sk3847.pdf
2SK3847 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS III) 2SK3847 Switching Regulator, DC/DC Converter and Motor Drive Unit: mmApplications Low drain source ON resistance : RDS (ON) = 12 m (typ.) High forward transfer admittance : |Yfs| = 36 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 40 V) Enhancement mode : Vth = 1.5 to 2.5 V (VDS = 1
9.5. Size:231K toshiba
2sk3845.pdf
2SK3845 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) 2SK3845 Switching Regulator, DC-DC Converter Applications and Unit: mmMotor Drive Applications Low drain-source ON resistance: RDS (ON) = 4.7 m (typ.) High forward transfer admittance: |Yfs| = 88 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 60 V) Enhancement model: Vt
9.6. Size:228K toshiba
2sk3844.pdf
2SK3844 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS) 2SK3844 Switching Regulator, DC-DC Converter Applications Unit: mmMotor Drive Applications Low drain-source ON resistance: RDS (ON) = 4.1 m (typ.) High forward transfer admittance: |Yfs| = 63 S (typ.) Low leakage current: IDSS = 100 A (max)(VDS = 60 V) Enhancement mode: Vth = 2.0
9.7. Size:182K toshiba
2sk3846.pdf
2SK3846 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSIII) 2SK3846 Switching Regulator, DC/DC Converter and Motor Drive Unit: mmApplications Low drain-source ON resistance : RDS (ON) = 12 m (typ.) High forward transfer admittance : |Yfs| = 33 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 40 V) Enhancement mode : Vth = 1.5~2.5 V (VDS
9.10. Size:357K inchange semiconductor
2sk3847b.pdf
isc N-Channel MOSFET Transistor 2SK3847BFEATURESDrain Current : I = 32A@ T =25D CDrain Source Voltage: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 16m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
9.11. Size:286K inchange semiconductor
2sk384s.pdf
isc N-Channel MOSFET Transistor 2SK384SFEATURESDrain Current : I = 0.3A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 50(Max) @V =15VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
9.12. Size:354K inchange semiconductor
2sk384l.pdf
isc N-Channel MOSFET Transistor 2SK384LFEATURESDrain Current : I = 0.3A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 50(Max) @V =15VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
9.13. Size:286K inchange semiconductor
2sk3845.pdf
isc N-Channel MOSFET Transistor 2SK3845FEATURESDrain Current : I = 70A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 5.8m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
9.14. Size:283K inchange semiconductor
2sk3847k.pdf
isc N-Channel MOSFET Transistor 2SK3847KFEATURESDrain Current : I = 32A@ T =25D CDrain Source Voltage: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 16m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
9.15. Size:279K inchange semiconductor
2sk3844.pdf
isc N-Channel MOSFET Transistor 2SK3844FEATURESDrain Current : I = 45A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 5.8m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
9.16. Size:287K inchange semiconductor
2sk3846.pdf
isc N-Channel MOSFET Transistor 2SK3846FEATURESDrain Current : I = 78A@ T =25D CDrain Source Voltage: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 16m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d
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