SK3849 Datasheet and Replacement

   Type Designator: SK3849
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1.5 A
   Transition Frequency (ft): 200 MHz
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: TO92

SK3849 Substitution

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SK3849 Datasheet (PDF)

..1. Size:70K njs
sk3849.pdf pdf_icon

9.1. Size:206K 1
2sk384l 2sk384s.pdf pdf_icon

9.2. Size:213K 1
2sk3843.pdf pdf_icon

2SK3843 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSIII) 2SK3843 Switching Regulator, DC/DC Converter and Motor Drive Unit: mmApplications Low drain-source ON resistance : RDS (ON) = 2.7 m (typ.) High forward transfer admittance : |Yfs| = 120 S (typ.) Low leakage current : IDSS = 10 A (max) (VDS = 40 V) Enhancement mode : Vth = 1.5~3.0 V (VDS

9.3. Size:216K toshiba
2sk3842.pdf pdf_icon

2SK3842 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) 2SK3842 Switching Regulator Applications, DC-DC Converter and Unit: mmMotor Drive Applications Low drain-source ON resistance: RDS (ON) =4.6 m (typ.) High forward transfer admittance: |Yfs| = 93 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 60 V) Enhancement model: Vth

9.4. Size:997K toshiba
2sk3847.pdf pdf_icon

2SK3847 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS III) 2SK3847 Switching Regulator, DC/DC Converter and Motor Drive Unit: mmApplications Low drain source ON resistance : RDS (ON) = 12 m (typ.) High forward transfer admittance : |Yfs| = 36 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 40 V) Enhancement mode : Vth = 1.5 to 2.5 V (VDS = 1

9.5. Size:231K toshiba
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2SK3845 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) 2SK3845 Switching Regulator, DC-DC Converter Applications and Unit: mmMotor Drive Applications Low drain-source ON resistance: RDS (ON) = 4.7 m (typ.) High forward transfer admittance: |Yfs| = 88 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 60 V) Enhancement model: Vt

9.6. Size:228K toshiba
2sk3844.pdf pdf_icon

2SK3844 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS) 2SK3844 Switching Regulator, DC-DC Converter Applications Unit: mmMotor Drive Applications Low drain-source ON resistance: RDS (ON) = 4.1 m (typ.) High forward transfer admittance: |Yfs| = 63 S (typ.) Low leakage current: IDSS = 100 A (max)(VDS = 60 V) Enhancement mode: Vth = 2.0

9.7. Size:182K toshiba
2sk3846.pdf pdf_icon

2SK3846 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSIII) 2SK3846 Switching Regulator, DC/DC Converter and Motor Drive Unit: mmApplications Low drain-source ON resistance : RDS (ON) = 12 m (typ.) High forward transfer admittance : |Yfs| = 33 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 40 V) Enhancement mode : Vth = 1.5~2.5 V (VDS

9.8. Size:70K njs
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9.9. Size:70K njs
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9.10. Size:357K inchange semiconductor
2sk3847b.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK3847BFEATURESDrain Current : I = 32A@ T =25D CDrain Source Voltage: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 16m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

9.11. Size:286K inchange semiconductor
2sk384s.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK384SFEATURESDrain Current : I = 0.3A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 50(Max) @V =15VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

9.12. Size:354K inchange semiconductor
2sk384l.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK384LFEATURESDrain Current : I = 0.3A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 50(Max) @V =15VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

9.13. Size:286K inchange semiconductor
2sk3845.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK3845FEATURESDrain Current : I = 70A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 5.8m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

9.14. Size:283K inchange semiconductor
2sk3847k.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK3847KFEATURESDrain Current : I = 32A@ T =25D CDrain Source Voltage: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 16m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

9.15. Size:279K inchange semiconductor
2sk3844.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK3844FEATURESDrain Current : I = 45A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 5.8m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

9.16. Size:287K inchange semiconductor
2sk3846.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK3846FEATURESDrain Current : I = 78A@ T =25D CDrain Source Voltage: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 16m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N5401 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .