SK3866A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SK3866A
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.9 W
Tensión colector-base (Vcb): 160 V
Tensión colector-emisor (Vce): 160 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 1 A
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 20 MHz
Ganancia de corriente contínua (hfe): 200
Paquete / Cubierta: TO92M
Búsqueda de reemplazo de transistor bipolar SK3866A
SK3866A Datasheet (PDF)
2sk3869.pdf
2SK3869 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOSVI) 2SK3869 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.55 (typ.) High forward transfer admittance: |Yfs| = 5.5 S (typ.) Low leakage current: IDSS = 100 A (VDS = 450 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maxi
2sk3863.pdf
2SK3863 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOSVI) 2SK3863 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35 (typ.) High forward transfer admittance: |Yfs| = 2.8S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximu
2sk3868.pdf
2SK3868 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOSVI) 2SK3868 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 1.3 (typ.) High forward transfer admittance: |Yfs| = 3S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum R
2sk3864.pdf
2SK3864 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) 2SK3864 PDP Sustain Circuit Applications Unit: mmSwitching Regulator Applications Low drain-source ON resistance: RDS (ON) = 20 m (typ.) High forward transfer admittance: |Yfs| = 75 S (typ.) Low leakage current: IDSS = 100 A (max) (VDSS = 120 V) Enhancement mode: Vth = 2.0~4.0 V
2sk386.pdf
isc N-Channel MOSFET Transistor 2SK386FEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 0.7(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d
2sk3869.pdf
isc N-Channel MOSFET Transistor 2SK3869FEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 0.68(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2sk3863.pdf
isc N-Channel MOSFET Transistor 2SK3863FEATURESDrain Current : I = 5.0A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 1.5(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2sk3868.pdf
isc N-Channel MOSFET Transistor 2SK3868FEATURESDrain Current : I = 5.0A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 1.7(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2S451
History: 2S451
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