SK3866A Specs and Replacement
Type Designator: SK3866A
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.9 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 1 A
Electrical Characteristics
Transition Frequency (ft): 20 MHz
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: TO92M
- BJT ⓘ Cross-Reference Search
SK3866A datasheet
9.1. Size:250K toshiba
2sk3869.pdf 
2SK3869 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOSVI) 2SK3869 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.55 (typ.) High forward transfer admittance Yfs = 5.5 S (typ.) Low leakage current IDSS = 100 A (VDS = 450 V) Enhancement model Vth = 2.0 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maxi... See More ⇒
9.2. Size:297K toshiba
2sk3863.pdf
2SK3863 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOSVI) 2SK3863 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 1.35 (typ.) High forward transfer admittance Yfs = 2.8S (typ.) Low leakage current IDSS = 100 A (VDS = 500 V) Enhancement model Vth = 2.0 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximu... See More ⇒
9.3. Size:234K toshiba
2sk3868.pdf
2SK3868 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOSVI) 2SK3868 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 1.3 (typ.) High forward transfer admittance Yfs = 3S (typ.) Low leakage current IDSS = 100 A (VDS = 500 V) Enhancement model Vth = 2.0 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum R... See More ⇒
9.4. Size:196K toshiba
2sk3864.pdf
2SK3864 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) 2SK3864 PDP Sustain Circuit Applications Unit mm Switching Regulator Applications Low drain-source ON resistance RDS (ON) = 20 m (typ.) High forward transfer admittance Yfs = 75 S (typ.) Low leakage current IDSS = 100 A (max) (VDSS = 120 V) Enhancement mode Vth = 2.0 4.0 V... See More ⇒
9.7. Size:284K inchange semiconductor
2sk386.pdf
isc N-Channel MOSFET Transistor 2SK386 FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 450V(Min) DSS Static Drain-Source On-Resistance R = 0.7 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d... See More ⇒
9.8. Size:280K inchange semiconductor
2sk3869.pdf
isc N-Channel MOSFET Transistor 2SK3869 FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 450V(Min) DSS Static Drain-Source On-Resistance R = 0.68 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid... See More ⇒
9.9. Size:286K inchange semiconductor
2sk3863.pdf
isc N-Channel MOSFET Transistor 2SK3863 FEATURES Drain Current I = 5.0A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 1.5 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid... See More ⇒
9.10. Size:279K inchange semiconductor
2sk3868.pdf
isc N-Channel MOSFET Transistor 2SK3868 FEATURES Drain Current I = 5.0A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 1.7 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid... See More ⇒
Detailed specifications: SK3452, SK3456, SK3479, SK3715, SK3841, SK3842, SK3849, SK3854, BC549, SK3867A, SK3899, SK3911, SK3912, SK3931, SK3932, SK9132, SK9137
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