HBD436 Todos los transistores

 

HBD436 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HBD436
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 40 W
   Tensión colector-base (Vcb): 32 V
   Tensión colector-emisor (Vce): 32 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 4 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 3 MHz
   Ganancia de corriente contínua (hfe): 85
   Paquete / Cubierta: TO220

 Búsqueda de reemplazo de transistor bipolar HBD436

 

HBD436 Datasheet (PDF)

 ..1. Size:145K  shantou-huashan
hbd436.pdf

HBD436
HBD436

P N P S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HBD436 APPLICATIONS Medium Power Linear And Switching Applicatione. ABSOLUTE MAXIMUM RATINGSTa=25 TO-220 TstgStorage Temperature -65~150TjJunction Temperature 150PCCollector Dissipation

 9.1. Size:41K  hsmc
hbd438t.pdf

HBD436
HBD436

Spec. No. : HT200206HI-SINCERITYIssued Date : 2001.04.01Revised Date : 2005.12.02MICROELECTRONICS CORP.Page No. : 1/4HBD438TCOMPLEMENTARY SILICON POWER TRANSISTORSDescriptionThe HBD438T is silison epitaxial-base PNP power transistor in TO-126 plasticpackage, intented for use in medium power linear and switching applications. Thecomplementary NPN type is HBD437T.TO-126A

 9.2. Size:43K  hsmc
hbd437t.pdf

HBD436
HBD436

Spec. No. : HT200201HI-SINCERITYIssued Date : 2001.04.01Revised Date : 2005.12.02MICROELECTRONICS CORP.Page No. : 1/4HBD437TCOMPLEMENTARY SILICON POWER TRANSISTORSDescriptionThe HBD437T is silison epitaxial-base NPN power transistor in TO-126 plasticpackage, intented for use in medium power linear and switching applications. Thecomplementary PNP type is HBD438T.TO-126A

 9.3. Size:144K  shantou-huashan
hbd435.pdf

HBD436
HBD436

N P N S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HBD435 APPLICATIONS Medium Power Linear And Switching Applicatione. ABSOLUTE MAXIMUM RATINGSTa=25 TO-220 TstgStorage Temperature -65~150TjJunction Temperature 150PCCollector Dissipation

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
Back to Top

 


HBD436
  HBD436
  HBD436
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: GN1A3Q | D965-KEHE | 2SD662B | 2SD661A | 2SC3080 | S9018L | S9012J | 2SA73L | 2SA73H | 2SA1015H | WT955 | TS13005CK | TP5001P3 | SS8550W-L | SS8550W-J | SS8550W-H | SS8550E | SS8550D | SS8550C | SS8050E | SS8050D

 

 

 
Back to Top