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HP122 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HP122
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 65 W
   Tensión colector-base (Vcb): 100 V
   Tensión colector-emisor (Vce): 100 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Capacitancia de salida (Cc): 200 pF
   Ganancia de corriente contínua (hfe): 1000
   Paquete / Cubierta: TO220

 Búsqueda de reemplazo de transistor bipolar HP122

 

HP122 Datasheet (PDF)

 ..1. Size:129K  shantou-huashan
 hp122.pdf

HP122 HP122

NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HP122 APPLICATIONS NPN Epitaxial Darlington Transistor. High DC Current Gain. Monolithic Construction with Built-In Base-Emitter Shunt Resistors. ABSOLUTE MAXIMUM RATINGSTa=25 TO-220 TstgStorage Temperature -55~150TjJunction Temperatur

 0.1. Size:72K  shantou-huashan
 hp122u.pdf

HP122 HP122

NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HP122U APPLICATIONS NPN Epitaxial Darlington Transistor. High DC Current Gain. Monolithic Construction with Built-In Base-Emitter Shunt Resistors. ABSOLUTE MAXIMUM RATINGSTa=25 TO-251 TstgStorage Temperature -55~150 TjJunction Tempera

 0.2. Size:71K  shantou-huashan
 hp122w.pdf

HP122 HP122

NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HP122W APPLICATIONS NPN Epitaxial Darlington Transistor. High DC Current Gain. Monolithic Construction with Built-In Base-Emitter Shunt Resistors. ABSOLUTE MAXIMUM RATINGSTa=25 TO-263 TstgStorage Temperature -55~150 TjJunction Tempera

Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

 

 
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