HP122 Specs and Replacement
Type Designator: HP122
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 65 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Collector Capacitance (Cc): 200 pF
Forward Current Transfer Ratio (hFE), MIN: 1000
Package: TO220
HP122 Substitution
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HP122 datasheet
NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HP122 APPLICATIONS NPN Epitaxial Darlington Transistor. High DC Current Gain. Monolithic Construction with Built-In Base-Emitter Shunt Resistors. ABSOLUTE MAXIMUM RATINGS Ta=25 TO-220 Tstg Storage Temperature -55 150 Tj Junction Temperatur... See More ⇒
NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HP122U APPLICATIONS NPN Epitaxial Darlington Transistor. High DC Current Gain. Monolithic Construction with Built-In Base-Emitter Shunt Resistors. ABSOLUTE MAXIMUM RATINGS Ta=25 TO-251 Tstg Storage Temperature -55 150 Tj Junction Tempera... See More ⇒
NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HP122W APPLICATIONS NPN Epitaxial Darlington Transistor. High DC Current Gain. Monolithic Construction with Built-In Base-Emitter Shunt Resistors. ABSOLUTE MAXIMUM RATINGS Ta=25 TO-263 Tstg Storage Temperature -55 150 Tj Junction Tempera... See More ⇒
Detailed specifications: HC5027, HC5039, HD313, HD880, HE2955, HE3055, HP102, HP107, MJE340, HP122U, HP122W, HP127, HP127W, HP142T, HP142TS, HP142TSW, HP142TW
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