HP50 Todos los transistores

 ..1. Size:904K  shantou-huashan
 hp50.pdf

 0.1. Size:111K  philips
 phb50n03lt phd50n03lt php50n03lt 7.pdf

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP50N03LT, PHB50N03LT Logic level FET PHD50N03LT FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 25 V Very low on-state resistance Fast switching ID = 48 A High thermal cycling performance Low thermal resistance RDS(ON) 16 m (VGS = 10 V) g Logic leve

 0.2. Size:65K  philips
 php50n06lt 3.pdf

Philips Semiconductors Product specification TrenchMOS transistor PHP50N06LT, PHB50N06LT, PHD50N06LT Logic level FET FEATURES SYMBOL QUICK REFERENCE DATA Trench technology VDSS = 55 V d Very low on-state resistance Fast switching ID = 50 A Stable off-state characteristics High thermal cycling performance RDS(ON) 24 m (VGS = 5 V) g Low thermal

 0.3. Size:54K  philips
 php50n06 1.pdf

Philips Semiconductors Product specification PowerMOS transistor PHP50N06 GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope. VDS Drain-source voltage 60 V The device is intended for use in ID Drain current (DC) 52 A Switched Mode Power Supplies Ptot Total power dissipation 150 W (SMPS), mo

 0.4. Size:49K  philips
 php50n03t 1.pdf

Philips Semiconductors Product specification TrenchMOS transistor PHP50N03T Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 30 V trench technology. The device ID Drain current (DC) 50 A features very low on-state r

 0.5. Size:705K  cn wxdh
 dhp50p04.pdf

DHP50P04 50A 40V P-channel Enhancement Mode Power MOSFET 1 Description DHP50P04 is an P-channel enhancement mode power field-effect transistor. Used advanced trench technology V = -40V DSS design, provided excellent Rdson and low gate charge. R = 12m DS(on) (TYP) The package form is SOP-8. Which accords with the RoHS standard. I = -50A D 2 Features Low on resistance Lo

 0.6. Size:738K  feihonltd
 fhp50n06 fhu50n06d fhd50n06d.pdf

N N-CHANNEL MOSFET FHP50N06/FHU50N06D/FHD50N06D MAIN CHARACTERISTICS FEATURES ID 50 A Low gate charge VDSS 60 V Crss ( 130pF) Low Crss (typical 130pF ) Rdson-typ @Vgs=10V 8.5m Fast switching Qg-typ 40nC 100% 100% avalanche tested dv/dt

 0.7. Size:374K  feihonltd
 fhp50n06c.pdf

 0.8. Size:242K  feihonltd
 fhp50n06a.pdf