H643 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: H643

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.5 W

Tensión colector-base (Vcb): 40 V

Tensión colector-emisor (Vce): 20 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 40

Encapsulados: TO92

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H643 datasheet

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h643.pdf pdf_icon

H643

 0.1. Size:496K  sanyo
mch6436.pdf pdf_icon

H643

MCH6436 Ordering number ENA1565A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device MCH6436 Applications Features Low ON-resistance. Ultrahigh speed switching. 1.8V drive. Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS

 0.2. Size:362K  sanyo
mch6431.pdf pdf_icon

H643

MCH6431 Ordering number ENA1852 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device MCH6431 Applications Features ON-resistance RDS(on)1=42m (typ.) 4V drive Halogen free compliance. Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Sour

 0.3. Size:346K  sanyo
mch6437.pdf pdf_icon

H643

MCH6437 Ordering number ENA1776 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device MCH6437 Applications Features ON-resistance RDS(on)1=18m (typ.) 1.8V drive Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 20 V Gate-to-Source Voltage VGSS 12 V Drai

Otros transistores... H5551, H556, H557, H558, H5609, H5610, H562, H639, 2SA1015, H732TM, H733, H789A, H8050S, H817, H8550S, H9012, H9013