H643 Datasheet and Replacement
Type Designator: H643
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO92
H643 Substitution
H643 Datasheet (PDF)
h643.pdf

PNP S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H643 APPLICATIONS Low frequency power amplifier ABSOLUTE MAXIMUM RATINGSTa=25 TO-92 TstgStorage Temperature -55~150 TjJunction Temperature150 PCCollector Dissipation
mch6436.pdf

MCH6436Ordering number : ENA1565ASANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceMCH6436ApplicationsFeatures Low ON-resistance. Ultrahigh speed switching. 1.8V drive.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 30 VGate-to-Source Voltage VGSS
mch6431.pdf

MCH6431Ordering number : ENA1852SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceMCH6431ApplicationsFeatures ON-resistance RDS(on)1=42m (typ.) 4V drive Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 30 VGate-to-Sour
mch6437.pdf

MCH6437Ordering number : ENA1776SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceMCH6437ApplicationsFeatures ON-resistance RDS(on)1=18m (typ.) 1.8V driveSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 20 VGate-to-Source Voltage VGSS 12 VDrai
Datasheet: H5551 , H556 , H557 , H558 , H5609 , H5610 , H562 , H639 , 2SC2240 , H732TM , H733 , H789A , H8050S , H817 , H8550S , H9012 , H9013 .
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