H643 Datasheet, Equivalent, Cross Reference Search
Type Designator: H643
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO92
H643 Transistor Equivalent Substitute - Cross-Reference Search
H643 Datasheet (PDF)
h643.pdf
PNP S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H643 APPLICATIONS Low frequency power amplifier ABSOLUTE MAXIMUM RATINGSTa=25 TO-92 TstgStorage Temperature -55~150 TjJunction Temperature150 PCCollector Dissipation
mch6436.pdf
MCH6436Ordering number : ENA1565ASANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceMCH6436ApplicationsFeatures Low ON-resistance. Ultrahigh speed switching. 1.8V drive.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 30 VGate-to-Source Voltage VGSS
mch6431.pdf
MCH6431Ordering number : ENA1852SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceMCH6431ApplicationsFeatures ON-resistance RDS(on)1=42m (typ.) 4V drive Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 30 VGate-to-Sour
mch6437.pdf
MCH6437Ordering number : ENA1776SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceMCH6437ApplicationsFeatures ON-resistance RDS(on)1=18m (typ.) 1.8V driveSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 20 VGate-to-Source Voltage VGSS 12 VDrai
cph6434.pdf
Ordering number : ENA0443 CPH6434SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceCPH6434ApplicationsFeatures Ultrahigh-speed switching. 1.8V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 30 VGate-to-Source Voltage VGSS 10 VDrain Current (DC)
mch6436.pdf
MCH6436 Power MOSFET www.onsemi.com 30V, 34m, 6A, Single N-Channel Features VDSS RDS(on) Max ID Max Low On-Resistance 34m@ 4.5V 1.8V Drive 30V 49m@ 2.5V 6A High Speed Switching 69m@ 1.8V ESD Diode-Protected Gate Pb-Free and RoHS Compliance Electrical Connection N-Channel Specifications Absolute Maximum Ratings at Ta = 25C 1, 2, 5, 6
mch6437.pdf
MCH6437 Power MOSFET www.onsemi.com 20V, 24m, 7A, Single N-Channel Features VDSS RDS(on) Max ID Max Low On-Resistance 24m@ 4.5V 1.8V Drive 20V 35m@ 2.5V 7A ESD Diode-Protected Gate 65m@ 1.8V Pb-Free and RoHS Compliance Specifications Electrical Connection N-Channel Absolute Maximum Ratings at Ta = 25C Unit Parameter Symbol Value1, 2,
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
