SFT1202E Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SFT1202E

Código: T1202

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 15 W

Tensión colector-base (Vcb): 180 V

Tensión colector-emisor (Vce): 150 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 140 MHz

Capacitancia de salida (Cc): 12 pF

Ganancia de corriente contínua (hFE): 200

Encapsulados: TO251

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SFT1202E datasheet

 7.1. Size:57K  sanyo
 sft1202.pdf pdf_icon

SFT1202E

Ordering number ENA1169 SFT1202 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor SFT1202 High-Voltage Switching Applications Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter. Features Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switch

 7.2. Size:413K  onsemi
 sft1202.pdf pdf_icon

SFT1202E

Ordering number ENA1169A SFT1202 Bipolar Transistor http //onsemi.com ( ) 150V, 2A, Low VCE sat , NPN Single TP/TP-FA Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter Features Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power diss

 7.3. Size:305K  onsemi
 sft1202-e.pdf pdf_icon

SFT1202E

Ordering number ENA1169A SFT1202 Bipolar Transistor http //onsemi.com ( ) 150V, 2A, Low VCE sat , NPN Single TP/TP-FA Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter Features Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power diss

 7.4. Size:250K  inchange semiconductor
 sft1202.pdf pdf_icon

SFT1202E

isc Silicon NPN Power Transistor SFT1202 DESCRIPTION Low Collector-Emitter Saturation Voltage- V )= 0.165V(Max)( I = 1A; I = 0.1A) CE(sat C B Fast -Switching speed High allowable power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS DC/DC converter Relay dirvers Lamp dirvers Motor dirvers inverter ABSO

MOSTRAR MÁS

Otros transistores... HS945, HX1267, HX128M, HX2785, HX3199, HX3904, HX3906, HX789A, S8550, SFT1202TLE, SFT2010, SFT2012, SFT2014, SFT3852-59, SFT5001, SFT6284, SFT6287