3CG8550M Todos los transistores

 

3CG8550M . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 3CG8550M
   Código: HY4B_HY4C_HY4D
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.45 W
   Tensión colector-base (Vcb): 40 V
   Tensión colector-emisor (Vce): 25 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 0.8 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Capacitancia de salida (Cc): 15 pF
   Ganancia de corriente contínua (hfe): 85
   Paquete / Cubierta: SOT23

 Búsqueda de reemplazo de transistor bipolar 3CG8550M

 

3CG8550M Datasheet (PDF)

 ..1. Size:136K  foshan
3cg8550m s8550m.pdf

3CG8550M
3CG8550M

S8550M(3CG8550M) PNP /SILICON PNP TRANSISTOR :/Purpose: Power amplifier applications. : S8050M(3DG8050M)/Features: Complementary pair with S8050M(3DG8050M). /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -40 V CBO V -25 V CEO V -6.0 V EBO I -800 mA

 7.1. Size:553K  jilin sino
3cg8550.pdf

3CG8550M
3CG8550M

PNP PNP EPITAXIAL SILICON TRANSISTOR R3CG8550 MAIN CHARACTERISTICS Package I -1.5A CV -25V CEOP 1W C APPLICATIONS High frequency switching power supply High frequency power transform Commonly power amplifier circuit TO-92

 7.2. Size:184K  foshan
3cg8550a.pdf

3CG8550M
3CG8550M

S8550A(3CG8550A) PNP /SILICON PNP TRANSISTOR : Purpose: Amplifier of portable radios in class B push-pull operation. :P I , S8050A(3DG8050A) C CFeatures: High P and I , complementary pair with S8050A(3DG8050A). C C/Absolute maximum ratings(Ta=25) Symbol Rati

 7.3. Size:221K  foshan
3cg8550.pdf

3CG8550M
3CG8550M

S8550(3CG8550) PNP /SILICON PNP TRANSISTOR : Purpose: Amplifier of portable radios in class B push-pull operation. :P I , S8050(3DG8050) C CFeatures: High P and I , complementary pair with S8050(3DG8050). C C/Absolute maximum ratings(Ta=25) Symbol Rating Uni

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