SBP13003H Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SBP13003H

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 30 W

Tensión colector-base (Vcb): 900 V

Tensión colector-emisor (Vce): 530 V

Tensión emisor-base (Veb): 9 V

Corriente del colector DC máxima (Ic): 1.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 6

Encapsulados: TO220

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SBP13003H datasheet

 ..1. Size:445K  winsemi
 sbp13003h.pdf pdf_icon

SBP13003H

SBP13003H SBP13003H SBP13003H SBP13003H High Voltage Fast -Switching NPN Power Transistor Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA General Description This Device is designed for high voltage , High speed Switching characteristics required such as lighting system, switching mode power supply. Absolute Maximum Ratings Symbol Parameter

 6.1. Size:364K  winsemi
 sbp13003o.pdf pdf_icon

SBP13003H

SBP13003-O SBP13003-O SBP13003-O SBP13003-O High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor Features Features Features Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA General Description G

 6.2. Size:560K  winsemi
 sbp13003d.pdf pdf_icon

SBP13003H

SBP13003D SBP13003D SBP13003D SBP13003D High Voltage Fast -Switching NPN Power Transistor Features symbol symbol symbol symbol Very High Switching Speed 2.Collector High Voltage Capability Wide Reverse Bias SOA 1.Base Built-in free wheeling diode 3.Emitter General Description This Device is designed for high Voltage ,High speed switching Characteristics requir

 6.3. Size:160K  semiwell
 sbp13003.pdf pdf_icon

SBP13003H

SBP13003 SemiWell Semiconductor High Voltage Fast-Switching NPN Power Transistor Features Symbol 2.Collector - Very High Switching Speed - Minimum Lot-to-Lot hFE Variation 1.Base - Short storge time - Wide Reverse Bias S.O.A 3.Emitter General Description TO-220 This devices is designed for high voltage, high speed switching characteristic,especially suitable for ba

MOSTRAR MÁS

Otros transistores... SFT8200, SFT8500, 3CG8550M, T2095, EB203D, ECG127, SBP13003, SBP13003D, TIP42, SBP13003O, SBP13005D, SBP13005D1, SBP13005O, SBP13005S, SBP13007D, SBP13007K, SBP13007O