SBP13003H. Аналоги и основные параметры

Наименование производителя: SBP13003H

Тип материала: Si

Полярность: NPN

Предельные значения

Максимальная рассеиваемая мощность (Pc): 30 W

Макcимально допустимое напряжение коллектор-база (Ucb): 900 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 530 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 9 V

Макcимальный постоянный ток коллектора (Ic): 1.5 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Статический коэффициент передачи тока (hFE): 6

Корпус транзистора: TO220

 Аналоги (замена) для SBP13003H

- подборⓘ биполярного транзистора по параметрам

 

SBP13003H даташит

 ..1. Size:445K  winsemi
 sbp13003h.pdf pdf_icon

SBP13003H

SBP13003H SBP13003H SBP13003H SBP13003H High Voltage Fast -Switching NPN Power Transistor Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA General Description This Device is designed for high voltage , High speed Switching characteristics required such as lighting system, switching mode power supply. Absolute Maximum Ratings Symbol Parameter

 6.1. Size:364K  winsemi
 sbp13003o.pdf pdf_icon

SBP13003H

SBP13003-O SBP13003-O SBP13003-O SBP13003-O High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor Features Features Features Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA General Description G

 6.2. Size:560K  winsemi
 sbp13003d.pdf pdf_icon

SBP13003H

SBP13003D SBP13003D SBP13003D SBP13003D High Voltage Fast -Switching NPN Power Transistor Features symbol symbol symbol symbol Very High Switching Speed 2.Collector High Voltage Capability Wide Reverse Bias SOA 1.Base Built-in free wheeling diode 3.Emitter General Description This Device is designed for high Voltage ,High speed switching Characteristics requir

 6.3. Size:160K  semiwell
 sbp13003.pdf pdf_icon

SBP13003H

SBP13003 SemiWell Semiconductor High Voltage Fast-Switching NPN Power Transistor Features Symbol 2.Collector - Very High Switching Speed - Minimum Lot-to-Lot hFE Variation 1.Base - Short storge time - Wide Reverse Bias S.O.A 3.Emitter General Description TO-220 This devices is designed for high voltage, high speed switching characteristic,especially suitable for ba

ПОКАЗАТЬ ЕЩЁ

Другие транзисторы: SFT8200, SFT8500, 3CG8550M, T2095, EB203D, ECG127, SBP13003, SBP13003D, TIP42, SBP13003O, SBP13005D, SBP13005D1, SBP13005O, SBP13005S, SBP13007D, SBP13007K, SBP13007O