SBC847BLT1G Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SBC847BLT1G

Código: S1F

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.23 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 45 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 100 MHz

Capacitancia de salida (Cc): 4.5 pF

Ganancia de corriente contínua (hFE): 150

Encapsulados: SOT23

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SBC847BLT1G datasheet

 ..1. Size:123K  onsemi
sbc847blt1g.pdf pdf_icon

SBC847BLT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon SBC847BLT1G Moisture Sensitivity Level 1 ESD Rating Human Body Model >4000 V ESD Rating Machine Model >400 V 3 We declare that the material of product compliance with RoHS requirements. 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit SOT 23 Collector Emitter Voltage VCEO 45 Vdc 3 COLLECT

 7.1. Size:110K  onsemi
bc847bpdxv6 sbc847bpdxv6.pdf pdf_icon

SBC847BLT1G

BC847BPDXV6, SBC847BPDXV6 NPN/PNP Dual General Purpose Transistor This transistor is designed for general purpose amplifier applications. It is housed in the SOT-563 which is designed for low http //onsemi.com power surface mount applications. Features (3) (2) (1) S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualif

 7.2. Size:114K  onsemi
sbc847bpdxv6t1g.pdf pdf_icon

SBC847BLT1G

BC847BPDXV6, SBC847BPDXV6 NPN/PNP Dual General Purpose Transistor This transistor is designed for general purpose amplifier applications. It is housed in the SOT-563 which is designed for low http //onsemi.com power surface mount applications. Features (3) (2) (1) S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualif

 7.3. Size:144K  onsemi
sbc847bdw1t1g.pdf pdf_icon

SBC847BLT1G

BC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G Series, NSVBC847BDW1T2G, BC848CDW1T1G http //onsemi.com Dual General Purpose Transistors SOT-363 CASE 419B NPN Duals STYLE 1 These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is (3) (2) (1) designed for low power surface mount applications. Features Q1 Q

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