SBC847BPDW1T1G Todos los transistores

 

SBC847BPDW1T1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SBC847BPDW1T1G
   Código: BF
   Material: Si
   Polaridad de transistor: NPN*PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.38 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 45 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Capacitancia de salida (Cc): 4.5 pF
   Ganancia de corriente contínua (hfe): 200
   Paquete / Cubierta: SOT363
 

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SBC847BPDW1T1G Datasheet (PDF)

 ..1. Size:177K  onsemi
 sbc847bpdw1t1g.pdf pdf_icon

SBC847BPDW1T1G

BC846BPDW1,BC847BPDW1,BC848CPDW1 SeriesDual General PurposeTransistorshttp://onsemi.comNPN/PNP Duals (Complementary)These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which isSOT-363designed for low power surface mount applications.CASE 419BSTYLE 1Features(3) (2) (1) S Prefix for Automotive and Other Ap

 2.1. Size:177K  onsemi
 sbc847bpdw1t3g.pdf pdf_icon

SBC847BPDW1T1G

BC846BPDW1,BC847BPDW1,BC848CPDW1 SeriesDual General PurposeTransistorshttp://onsemi.comNPN/PNP Duals (Complementary)These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which isSOT-363designed for low power surface mount applications.CASE 419BSTYLE 1Features(3) (2) (1) S Prefix for Automotive and Other Ap

 5.1. Size:110K  onsemi
 bc847bpdxv6 sbc847bpdxv6.pdf pdf_icon

SBC847BPDW1T1G

BC847BPDXV6,SBC847BPDXV6NPN/PNP Dual GeneralPurpose TransistorThis transistor is designed for general purpose amplifierapplications. It is housed in the SOT-563 which is designed for lowhttp://onsemi.compower surface mount applications.Features(3) (2) (1) S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC-Q101 Qualif

 5.2. Size:114K  onsemi
 sbc847bpdxv6t1g.pdf pdf_icon

SBC847BPDW1T1G

BC847BPDXV6,SBC847BPDXV6NPN/PNP Dual GeneralPurpose TransistorThis transistor is designed for general purpose amplifierapplications. It is housed in the SOT-563 which is designed for lowhttp://onsemi.compower surface mount applications.Features(3) (2) (1) S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC-Q101 Qualif

MOSTRAR MÁS

Otros transistores... SBC846BLT3G , SBC846BPDW1T1G , SBC846BPDW1T2G , SBC846BWT1G , SBC847AWT1G , SBC847BDW1T1G , SBC847BDW1T3G , SBC847BLT1G , 2N2222A , SBC847BPDW1T3G , SBC847BPDXV6T1G , SBC847BWT1G , SBC847CDW1T1G , SBC847CDXV6T1G , SBC847CLT1G , SBC847CWT1G , SBC847CWT3G .

History: 2SC2506 | DMG56402 | DTS4045 | BU406A8 | 3DG123S | HR1A3M | SPS4145

 

 
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