SBC847BPDW1T1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SBC847BPDW1T1G
   Código: BF
   Material: Si
   Polaridad de transistor: NPN*PNP

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.38 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 45 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 100 MHz
   Capacitancia de salida (Cc): 4.5 pF
   Ganancia de corriente contínua (hfe): 200
   Paquete / Cubierta: SOT363

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SBC847BPDW1T1G Datasheet (PDF)

..1. Size:177K onsemi
sbc847bpdw1t1g.pdf

BC846BPDW1,BC847BPDW1,BC848CPDW1 SeriesDual General PurposeTransistorshttp://onsemi.comNPN/PNP Duals (Complementary)These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which isSOT-363designed for low power surface mount applications.CASE 419BSTYLE 1Features(3) (2) (1) S Prefix for Automotive and Other Ap

2.1. Size:177K onsemi
sbc847bpdw1t3g.pdf

5.1. Size:110K onsemi
bc847bpdxv6 sbc847bpdxv6.pdf

BC847BPDXV6,SBC847BPDXV6NPN/PNP Dual GeneralPurpose TransistorThis transistor is designed for general purpose amplifierapplications. It is housed in the SOT-563 which is designed for lowhttp://onsemi.compower surface mount applications.Features(3) (2) (1) S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC-Q101 Qualif

5.2. Size:114K onsemi
sbc847bpdxv6t1g.pdf